Thermal expansion tensor represents a key parameter for the numerical modeling of the crystal growth process. However, the modeling of β-Ga2O3 commonly utilizes one single thermal expansion constant that misses its anisotropic nature and temperature-dependent characteristics. Herein, we addressed this limitation by calibrating an anisotropic, temperature-dependent thermal expansion tensor using the experimental lattice parameters of β-Ga2O3 up to 1200 K. We found that COMSOL Multiphysics simulations employing the calibrated tensor yield stress distribution remarkably distinct from those relying on the commonly assumed constants. Specifically, our simulations predict a von Mises stress concentration near the crystal bottom, which explains the experimentally observed crack formation at corresponding locations. This contrasts with the simulations using the single-value thermal expansion constant, which fails to predict such stress concentration. The physical origin of crystal cracking is found to be rooted in the compressive force exerted by the iridium crucible during the cooling process. Our findings suggest that the physical anisotropy of β-Ga2O3 should be carefully considered in modeling and simulation. With the calibrated thermal expansion tensor, we provide a validated set of thermomechanical parameters for reliable β-Ga2O3 crystal growth simulations.
Skip Nav Destination
Article navigation
18 March 2024
Research Article|
March 18 2024
Anisotropic thermal expansion tensor of β-Ga2O3 and its critical role in casting-grown crystal cracking
Special Collection:
(Ultra)Wide-bandgap Semiconductors for Extreme Environment Electronics
Yuchao Yan
;
Yuchao Yan
(Data curation, Formal analysis, Methodology, Visualization, Writing – original draft)
1
State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University
, Hangzhou 310027, China
2
Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University
, Hangzhou, Zhejiang 311200, China
Search for other works by this author on:
Dan Wu;
Dan Wu
(Data curation, Methodology)
2
Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University
, Hangzhou, Zhejiang 311200, China
3
Hangzhou Garen Semiconductor Company Limited
, Hangzhou, Zhejiang 311200, China
Search for other works by this author on:
Ning Xia
;
Ning Xia
(Data curation, Methodology)
3
Hangzhou Garen Semiconductor Company Limited
, Hangzhou, Zhejiang 311200, China
Search for other works by this author on:
Tianqi Deng
;
Tianqi Deng
a)
(Conceptualization, Resources, Supervision, Writing – review & editing)
1
State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University
, Hangzhou 310027, China
2
Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University
, Hangzhou, Zhejiang 311200, China
Search for other works by this author on:
Hui Zhang
;
Hui Zhang
a)
(Resources, Supervision)
1
State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University
, Hangzhou 310027, China
2
Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University
, Hangzhou, Zhejiang 311200, China
Search for other works by this author on:
Deren Yang
Deren Yang
(Supervision)
1
State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University
, Hangzhou 310027, China
2
Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University
, Hangzhou, Zhejiang 311200, China
Search for other works by this author on:
Appl. Phys. Lett. 124, 122102 (2024)
Article history
Received:
January 04 2024
Accepted:
March 04 2024
Citation
Yuchao Yan, Dan Wu, Ning Xia, Tianqi Deng, Hui Zhang, Deren Yang; Anisotropic thermal expansion tensor of β-Ga2O3 and its critical role in casting-grown crystal cracking. Appl. Phys. Lett. 18 March 2024; 124 (12): 122102. https://doi.org/10.1063/5.0195733
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
478
Views
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Feedback cooling of an insulating high-Q diamagnetically levitated plate
S. Tian, K. Jadeja, et al.
Special topic on Wide- and ultrawide-bandgap electronic semiconductor devices
Joachim Würfl, Tomás Palacios, et al.