Traditionally, elemental Ga and Si have been used to supply Ga and Si, respectively, in molecular beam epitaxy (MBE) to grow Si-doped β-Ga2O3. In this work, we investigated the feasibility of enhancing the β-Ga2O3 growth rate by using a Ga-suboxide precursor in a plasma-assisted MBE. Additionally, Si doping of β-Ga2O3 using diluted disilane and Ga-suboxide as the Si and Ga precursors, respectively, was studied. The growth rate and film quality under different suboxide fluxes were inspected. We found that Si concentration has an inverse relationship with Ga2O flux due to atom competition. A room-temperature mobility of 115 cm2/V s was measured for an electron concentration of 1.2 × 1017 cm−3 on the sample grown using a Ga2O beam equivalent pressure of 1.1 × 10−7 Torr and a disilane flow rate of 0.006 sccm. Temperature-dependent Hall characterization was performed on this sample, revealing compensating acceptor and neutral impurity densities of 2.70 × 1015 and 8.23 × 1017 cm−3, respectively.
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18 March 2024
Research Article|
March 18 2024
Investigation of Si incorporation in (010) -Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor
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Zhuoqun Wen
;
Zhuoqun Wen
a)
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Visualization, Writing – original draft, Writing – review & editing)
1
Department of Materials Science and Engineering, University of Michigan
, Ann Arbor, Michigan 48109, USA
a)Author to whom correspondence should be addressed: [email protected]
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Xin Zhai
;
Xin Zhai
(Conceptualization, Formal analysis, Investigation, Writing – review & editing)
2
Department of Electrical Engineering and Computer Science, University of Michigan
, Ann Arbor, Michigan 48109, USA
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Cindy Lee;
Cindy Lee
(Data curation, Formal analysis, Writing – review & editing)
3
Department of Mechanical Engineering, University of Michigan
, Ann Arbor, Michigan 48109, USA
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Stefan Kosanovic
;
Stefan Kosanovic
(Writing – original draft, Writing – review & editing)
4
Department of Electrical and Computer Engineering, University of California Los Angeles
, California 90095, USA
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Yunjo Kim
;
Yunjo Kim
(Conceptualization, Formal analysis, Investigation, Methodology, Visualization, Writing – review & editing)
5
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB
, Dayton, Ohio 45433, USA
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Adam T. Neal
;
Adam T. Neal
(Conceptualization, Data curation, Formal analysis, Resources, Supervision, Writing – review & editing)
5
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB
, Dayton, Ohio 45433, USA
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Thaddeus Asel
;
Thaddeus Asel
(Conceptualization, Methodology, Writing – review & editing)
5
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB
, Dayton, Ohio 45433, USA
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Shin Mou
;
Shin Mou
(Conceptualization, Data curation, Resources, Writing – review & editing)
5
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB
, Dayton, Ohio 45433, USA
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Elaheh Ahmadi
Elaheh Ahmadi
(Conceptualization, Data curation, Funding acquisition, Investigation, Methodology, Project administration, Supervision, Writing – original draft, Writing – review & editing)
2
Department of Electrical Engineering and Computer Science, University of Michigan
, Ann Arbor, Michigan 48109, USA
4
Department of Electrical and Computer Engineering, University of California Los Angeles
, California 90095, USA
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 124, 122101 (2024)
Article history
Received:
November 28 2023
Accepted:
February 29 2024
Citation
Zhuoqun Wen, Xin Zhai, Cindy Lee, Stefan Kosanovic, Yunjo Kim, Adam T. Neal, Thaddeus Asel, Shin Mou, Elaheh Ahmadi; Investigation of Si incorporation in (010) -Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor. Appl. Phys. Lett. 18 March 2024; 124 (12): 122101. https://doi.org/10.1063/5.0189400
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