In this Letter, we proposed a robust InGaAs/Si bonded heterojunction by polycrystalline Si (poly-Si) and amorphous interlayers. The ultra-thin amorphous layer is induced through Ar plasma treatment. The synergism of poly-Si and amorphous interlayers effectively blocks the lattice mismatch and releases the interfacial thermal stress. A bubble- and defect-free bonding interface is achieved even if after annealing at 500 °C, demonstrating compatibility with high-temperature processes. The heavily doped poly-Si interlayer sweeps the electric field from the poly-Si layer and concentrates in the amorphous layer, rendering electron tunneling through the bonding interface and reducing the interfacial recombination rates. As a result, the bonded InGaAs/Si PIN photodetector harvests a saturated and low dark density of 0.26 mA/cm2 at −1 V and a high rectification ratio of 3.5 × 105 at ±1 V. Additionally, the non-optimized device achieves a high responsivity of 0.82 A/W at 1550 nm. These results indicate that the proposed bonding strategy provides a viable route to tackle the electronic, optical, and thermal barriers of integrating single-crystal InGaAs into Si platforms. This enables the photodetection of InGaAs/Si devices with a high signal-to-noise ratio.
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18 March 2024
Research Article|
March 18 2024
InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer
Jinlong Jiao
;
Jinlong Jiao
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Visualization, Writing – original draft, Writing – review & editing)
1
Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University
, Xiamen 361005, China
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Ruoyun Ji;
Ruoyun Ji
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Visualization, Writing – review & editing)
1
Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University
, Xiamen 361005, China
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Liqiang Yao
;
Liqiang Yao
(Methodology)
1
Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University
, Xiamen 361005, China
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Yingjie Rao;
Yingjie Rao
(Methodology)
1
Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University
, Xiamen 361005, China
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Shaoying Ke
;
Shaoying Ke
(Methodology)
2
College of Physics and Information Engineering, Minnan Normal University
, Zhangzhou 363000, China
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Jianfang Xu;
Jianfang Xu
(Methodology)
1
Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University
, Xiamen 361005, China
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Yibo Zeng;
Yibo Zeng
(Methodology)
3
Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University
, Xiamen 361005, China
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Cheng Li
;
Cheng Li
(Methodology)
1
Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University
, Xiamen 361005, China
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Guangyang Lin
;
Guangyang Lin
a)
(Conceptualization, Formal analysis, Resources, Writing – review & editing)
1
Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University
, Xiamen 361005, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Wei Huang;
Wei Huang
a)
(Conceptualization, Formal analysis, Investigation, Resources, Supervision, Writing – review & editing)
1
Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University
, Xiamen 361005, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Songyan Chen
Songyan Chen
a)
(Conceptualization, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Supervision, Writing – review & editing)
1
Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University
, Xiamen 361005, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
Appl. Phys. Lett. 124, 121101 (2024)
Article history
Received:
December 19 2023
Accepted:
March 08 2024
Citation
Jinlong Jiao, Ruoyun Ji, Liqiang Yao, Yingjie Rao, Shaoying Ke, Jianfang Xu, Yibo Zeng, Cheng Li, Guangyang Lin, Wei Huang, Songyan Chen; InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer. Appl. Phys. Lett. 18 March 2024; 124 (12): 121101. https://doi.org/10.1063/5.0192394
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