This study explores gate-controlled superconductivity in metallic superconductors by employing a top-gate architecture with a 15 nm monocrystalline h-BN as a gate dielectric. The transport properties under gate voltage can be elucidated by injecting high-energy electrons, following the Fowler–Nordheim electron field emission model. In contrast to conventional resistive Joule heating, high-energy electron injection with top-gating exhibits excellent power efficiency in suppressing superconductivity. A nearby superconducting bridge, which serves as a thermometer, indicates that our top-gate device can achieve good local control, well limited within a distance of 0.6 μm due to the very low top-gating power. These findings are essential for advancing efficient and highly integrated tunable superconducting electronic devices.
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11 March 2024
Research Article|
March 11 2024
High-energy electron injection in top-gated niobium microbridges for enhanced power efficiency and localized control
Hongmei Du;
Hongmei Du
(Software, Writing – original draft)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
2
Purple Mountain Laboratories
, Nanjing 211111, China
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Zuyu Xu
;
Zuyu Xu
a)
(Conceptualization, Formal analysis)
3
School of Integrated Circuits, Anhui University
, Hefei, Anhui 230601, China
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Ping Zhang;
Ping Zhang
(Investigation)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
2
Purple Mountain Laboratories
, Nanjing 211111, China
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Dingding Li;
Dingding Li
(Methodology)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
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Zihan Wei;
Zihan Wei
(Validation)
2
Purple Mountain Laboratories
, Nanjing 211111, China
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Zixi Wang;
Zixi Wang
(Validation)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
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Shoucheng Hou;
Shoucheng Hou
(Investigation)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
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Benwen Chen;
Benwen Chen
(Data curation)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
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Tao Liu;
Tao Liu
(Software)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
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Ruxin Liu;
Ruxin Liu
(Resources)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
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Yang-Yang Lyu
;
Yang-Yang Lyu
(Methodology)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
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Hancong Sun
;
Hancong Sun
(Conceptualization)
2
Purple Mountain Laboratories
, Nanjing 211111, China
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Yong-Lei Wang
;
Yong-Lei Wang
(Validation)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
2
Purple Mountain Laboratories
, Nanjing 211111, China
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Huabing Wang
;
Huabing Wang
a)
(Writing – review & editing)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
2
Purple Mountain Laboratories
, Nanjing 211111, China
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Peiheng Wu
Peiheng Wu
(Funding acquisition)
1
Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University
, Nanjing 210023, China
2
Purple Mountain Laboratories
, Nanjing 211111, China
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Appl. Phys. Lett. 124, 112601 (2024)
Article history
Received:
January 01 2024
Accepted:
February 25 2024
Citation
Hongmei Du, Zuyu Xu, Ping Zhang, Dingding Li, Zihan Wei, Zixi Wang, Shoucheng Hou, Benwen Chen, Tao Liu, Ruxin Liu, Yang-Yang Lyu, Hancong Sun, Yong-Lei Wang, Huabing Wang, Peiheng Wu; High-energy electron injection in top-gated niobium microbridges for enhanced power efficiency and localized control. Appl. Phys. Lett. 11 March 2024; 124 (11): 112601. https://doi.org/10.1063/5.0195254
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