Structural and optical properties of a green-emitting cubic (i.e., zinc blende) GaN/In0.16Ga0.84N/GaN single quantum well structure are reported. The active layer is grown on a phase-pure (i.e., 100%) cubic GaN enabled on a 1 × 1 cm2 U-grooved silicon (100) through aspect ratio phase trapping. Energy dispersive x-ray spectroscopy combined with room temperature cathodoluminescence reveals 522 nm green light emission at room temperature with only 16.0% ± 1.6% of indium content, which is ∼30% less than the amount of indium needed in a traditional green-emitting hexagonal (i.e., wurtzite) well. Temperature-dependent behavior of the green emission, such as activation energy, s-shaped peak energy shift, and linewidth, is reported. Cathodoluminescence at 8 and 300 K reveals an internal quantum efficiency of 32.0% ± 0.6%, which is higher than any reported value for cubic wells. Overall, phase-pure cubic active layers on phase transition cubic GaN are shown to be promising for green and longer wavelength emitters.

1.
J.
Heber
, “
Nobel prize 2014: Akasaki, Amano & Nakamura
,”
Nat. Phys.
10
(
11
),
791
791
(
2014
).
2.
M.
Pattison
,
M.
Hansen
,
N.
Bardsley
,
G.
Thomson
,
K.
Gordon
,
A.
Wilkerson
,
K.
Lee
,
V.
Nubbe
, and
S.
Donnelly
, 2022 Solid-State Lighting R&D Opportunities (
U. S. Department of Energy
,
2022
), p. DOE/EE-2542, 1862626, 8851.
3.
J. M.
Phillips
,
M. E.
Coltrin
,
M. H.
Crawford
,
A. J.
Fischer
,
M. R.
Krames
,
R.
Mueller-Mach
,
G. O.
Mueller
,
Y.
Ohno
,
L. E. S.
Rohwer
,
J. A.
Simmons
, and
J. Y.
Tsao
, “
Research challenges to ultra-efficient inorganic solid-state lighting
,”
Laser Photonics Rev.
1
(
4
),
307
333
(
2007
).
4.
Y.-C.
Tsai
,
J.-P.
Leburton
, and
C.
Bayram
, “
Quenching of the efficiency droop in cubic phase InGaAlN light-emitting diodes
,”
IEEE Trans. Electron Devices
69
(
6
),
3240
3245
(
2022
).
5.
C.
Lynsky
,
A. I.
Alhassan
,
G.
Lheureux
,
B.
Bonef
,
S. P.
DenBaars
,
S.
Nakamura
,
Y.-R.
Wu
,
C.
Weisbuch
, and
J. S.
Speck
, “
Barriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes
,”
Phys. Rev. Mater.
4
(
5
),
054604
(
2020
).
6.
Y.-C.
Tsai
,
C.
Bayram
, and
J.-P.
Leburton
, “
Interplay between Auger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes
,”
J. Appl. Phys.
131
(
19
),
193102
(
2022
).
7.
J.
Lee
,
J.-P.
Leburton
, and
C.
Bayram
, “
Design tradeoffs between traditional hexagonal and emerging cubic InXGa(1–X)N/GaN-based green light-emitting diodes
,”
J. Opt. Soc. Am. B
40
(
5
),
1017
(
2023
).
8.
S. A.
Church
,
M.
Quinn
,
K.
Cooley-Greene
,
B.
Ding
,
A.
Gundimeda
,
M. J.
Kappers
,
M.
Frentrup
,
D. J.
Wallis
,
R. A.
Oliver
, and
D. J.
Binks
, “
Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
,”
J. Appl. Phys.
129
(
17
),
175702
(
2021
).
9.
S. F.
Li
,
D. J.
As
,
K.
Lischka
,
D. G.
Pacheco-Salazar
,
L. M. R.
Scolfaro
,
J. R.
Leite
,
F.
Cerdeira
, and
E. A.
Meneses
, “
Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells
,”
MRS Proc.
831
,
613
618
(
2004
).
10.
S.
Li
,
J.
Schörmann
,
D. J.
As
, and
K.
Lischka
, “
Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells
,”
Appl. Phys. Lett.
90
(
7
),
071903
(
2007
).
11.
C. A.
Hernández-Gutiérrez
,
Y. L.
Casallas-Moreno
,
V.-T.
Rangel-Kuoppa
,
D.
Cardona
,
Y.
Hu
,
Y.
Kudriatsev
,
M. A.
Zambrano-Serrano
,
S.
Gallardo-Hernandez
, and
M.
Lopez-Lopez
, “
Study of the heavily p-type doping of cubic GaN with Mg
,”
Sci. Rep.
10
(
1
),
16858
(
2020
).
12.
R.
Suzuki
,
A.
Kawaharazuka
, and
Y.
Horikoshi
, “
MBE growth of GaN on MgO substrate
,”
J. Cryst. Growth
301–302
,
478
481
(
2007
).
13.
C. J. M.
Stark
,
T.
Detchprohm
,
S. C.
Lee
,
Y.-B.
Jiang
,
S. R. J.
Brueck
, and
C.
Wetzel
, “
Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)
,”
Appl. Phys. Lett.
103
(
23
),
232107
(
2013
).
14.
C.
Bayram
,
J. A.
Ott
,
K.-T.
Shiu
,
C.-W.
Cheng
,
Y.
Zhu
,
J.
Kim
,
M.
Razeghi
, and
D. K.
Sadana
, “
Cubic phase GaN on nano-grooved Si (100) via maskless selective area epitaxy
,”
Adv. Funct. Mater.
24
(
28
),
4492
4496
(
2014
).
15.
R.
Liu
and
C.
Bayram
, “
Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100)
,”
Appl. Phys. Lett.
109
(
4
),
042103
(
2016
).
16.
J.
Lee
,
Y. C.
Chiu
,
M. A.
Johar
, and
C.
Bayram
, “
Structural and optical properties of cubic GaN on U-grooved Si (100)
,”
Appl. Phys. Lett.
121
(
3
),
032101
(
2022
).
17.
S.
Marcinkevičius
,
R.
Yapparov
,
Y. C.
Chow
,
C.
Lynsky
,
S.
Nakamura
,
S. P.
DenBaars
, and
J. S.
Speck
, “
High internal quantum efficiency of long wavelength InGaN quantum wells
,”
Appl. Phys. Lett.
119
(
7
),
071102
(
2021
).
18.
M.-S.
Oh
,
M.-K.
Kwon
,
I.-K.
Park
,
S.-H.
Baek
,
S.-J.
Park
,
S. H.
Lee
, and
J. J.
Jung
, “
Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature
,”
J. Cryst. Growth
289
(
1
),
107
112
(
2006
).
19.
C.
Humphreys
, in
DoE SSL RD Workshop
, Long Beach, CA (
2017
).
20.
K.
Kanaya
and
S.
Okayama
, “
Penetration and energy-loss theory of electrons in solid targets
,”
J. Phys. Appl. Phys.
5
(
1
),
43
58
(
1972
).
21.
S. M.
Davidson
and
C. A.
Dimitriadis
, “
Advances in the electrical assessment of semiconductors using the scanning electron microscope
,”
J. Microsc.
118
(
3
),
275
290
(
1980
).
22.
Z.
Rouabah
,
A.
Bouzid
,
C.
Champion
, and
N.
Bouarissa
, “
Electron range-energy relationships for calculating backscattering coefficients in elemental and compound semiconductors
,”
Solid State Commun.
151
(
11
),
838
841
(
2011
).
23.
M. A.
Reshchikov
and
H.
Morkoç
, “
Luminescence properties of defects in GaN
,”
J. Appl. Phys.
97
(
6
),
061301
(
2005
).
24.
M. A.
Reshchikov
, “
Measurement and analysis of photoluminescence in GaN
,”
J. Appl. Phys.
129
(
12
),
121101
(
2021
).
25.
P. G.
Eliseev
,
P.
Perlin
,
J.
Lee
, and
M.
Osiński
, “
‘Blue’ temperature-induced shift and band-tail emission in InGaN-based light sources
,”
Appl. Phys. Lett.
71
(
5
),
569
571
(
1997
).
26.
G.
Franssen
,
E.
Litwin-Staszewska
,
R.
Piotrzkowski
,
T.
Suski
, and
P.
Perlin
, “
Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes
,”
J. Appl. Phys.
94
(
9
),
6122
6128
(
2003
).
27.
G.
Chen
,
M.
Craven
,
A.
Kim
,
A.
Munkholm
,
S.
Watanabe
,
M.
Camras
,
W.
Götz
, and
F.
Steranka
, “
Performance of high-power III-nitride light emitting diodes
,”
Phys. Status Solidi A
205
(
5
),
1086
1092
(
2008
).
28.
M.
Peter
,
A.
Laubsch
,
W.
Bergbauer
,
T.
Meyer
,
M.
Sabathil
,
J.
Baur
, and
B.
Hahn
, “
New developments in green LEDs: New developments in green LEDs
,”
Phys. Status Solidi A
206
(
6
),
1125
1129
(
2009
).
29.
H.
Amano
, “
Progress and prospect of the growth of wide-band-gap group III nitrides: Development of the growth method for single-crystal bulk GaN
,”
Jpn. J. Appl. Phys., Part 1
52
(
5R
),
050001
(
2013
).
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