The interlayer antiferromagnetic (AFM) coupling between thin films plays a significant role in the application of spintronics and magnetic memory devices. Previously, we observed AFM coupling phenomenon at low temperatures in rare-earth iron garnet bilayers epitaxially grown on Y3Al5O12 substrates. Here, we report a detailed study on the impacts of various factors, including temperature, crystallographic orientation, and layer thickness, on the AMF coupling and magnetization reversal behavior of such a bilayer system. A simple energy model qualitatively described the coupling behavior of the two layers during the magnetization reversal process. The interlayer coupling strength was calculated by measuring the minor magnetic hysteresis loops. The current results can serve as a reminder for future research on interlayer AFM coupling phenomena and highlight the potential of manipulating the magnetic properties in rare-earth garnet bilayers for spintronics studies and other applications.
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28 August 2023
Research Article|
September 01 2023
Interlayer antiferromagnetic coupling in Tb3Fe5O12/Y3Fe5O12 bilayers
Special Collection:
Ferrimagnetic Spintronics
Jing Ming Liang
;
Jing Ming Liang
(Conceptualization, Data curation, Investigation, Methodology, Validation, Writing – original draft)
1
Department of Applied Physics, The Hong Kong Polytechnic University
, Hung Hom, Hong Kong, China
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Xu Wen Zhao
;
Xu Wen Zhao
(Methodology, Validation, Writing – review & editing)
1
Department of Applied Physics, The Hong Kong Polytechnic University
, Hung Hom, Hong Kong, China
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Xin Yuan
;
Xin Yuan
(Data curation, Methodology)
1
Department of Applied Physics, The Hong Kong Polytechnic University
, Hung Hom, Hong Kong, China
2
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
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Yu Kuai Liu
;
Yu Kuai Liu
(Funding acquisition, Validation, Writing – review & editing)
3
College of Electronic Information and Mechatronic Engineering, Zhaoqing University
, Zhaoqing, Guangdong 526061, China
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Sheung Mei Ng
;
Sheung Mei Ng
(Methodology, Validation, Writing – review & editing)
1
Department of Applied Physics, The Hong Kong Polytechnic University
, Hung Hom, Hong Kong, China
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Hon Fai Wong
;
Hon Fai Wong
(Data curation, Methodology, Validation)
1
Department of Applied Physics, The Hong Kong Polytechnic University
, Hung Hom, Hong Kong, China
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Pei Gen Li
;
Pei Gen Li
(Methodology, Validation)
1
Department of Applied Physics, The Hong Kong Polytechnic University
, Hung Hom, Hong Kong, China
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Yan Zhou
;
Yan Zhou
(Funding acquisition, Validation)
4
School of Science and Engineering, Chinese University of Hong Kong
, Shenzhen, Guangdong 518172, China
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Fu Xiang Zhang
;
Fu Xiang Zhang
(Data curation, Methodology, Resources)
2
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
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Chee Leung Mak
;
Chee Leung Mak
(Funding acquisition, Validation)
1
Department of Applied Physics, The Hong Kong Polytechnic University
, Hung Hom, Hong Kong, China
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Chi Wah Leung
Chi Wah Leung
a)
(Funding acquisition, Project administration, Supervision, Validation, Writing – review & editing)
1
Department of Applied Physics, The Hong Kong Polytechnic University
, Hung Hom, Hong Kong, China
a)Author to whom correspondence should be addressed: dennis.leung@polyu.edu.hk
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a)Author to whom correspondence should be addressed: dennis.leung@polyu.edu.hk
Appl. Phys. Lett. 123, 092405 (2023)
Article history
Received:
May 12 2023
Accepted:
August 15 2023
Citation
Jing Ming Liang, Xu Wen Zhao, Xin Yuan, Yu Kuai Liu, Sheung Mei Ng, Hon Fai Wong, Pei Gen Li, Yan Zhou, Fu Xiang Zhang, Chee Leung Mak, Chi Wah Leung; Interlayer antiferromagnetic coupling in Tb3Fe5O12/Y3Fe5O12 bilayers. Appl. Phys. Lett. 28 August 2023; 123 (9): 092405. https://doi.org/10.1063/5.0157882
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