Low-resistance contact has long been pursued in the two-dimensional (2D) electronic/optoelectronic device community. Still, an economy-efficient method highly compatible with the conventional 2D device fabrication process in laboratory remains to be explored. Herein, we report a plasma-optimized contact strategy for high-performance PdSe2 nanoflake-based field-effect transistors (FETs). Selenium vacancies created by air plasma can introduce p-type doping in the contact area, thus optimizing the device performance. The effect of plasma treatment on PdSe2 nanoflake is corroborated by high-resolution transmission electron microscopy, energy-dispersive x-ray spectroscopy spectrum, atomic force microscopy, and Kelvin probe force microscopy. The PdSe2 FET with plasma-optimized contact exhibits significantly improved field-effect carrier mobilities, current on/off ratios, and reduced contact resistance than that without plasma treatment fabricated from the same PdSe2 nanoflake. Moreover, this strategy has also been proven effective to prepare high-performance FETs based on 2D WSe2 and MoSe2 nanoflakes, further demonstrating its application prospect.
Plasma-optimized contact for high-performance PdSe2 nanoflake-based field-effect transistors
Jiajia Zha, Handa Liu, Huide Wang, Siyuan Li, Haoxin Huang, Yunpeng Xia, Chen Ma, Peng Yang, Zhuomin Zhang, Zhengbao Yang, Ye Chen, Johnny C. Ho, Chaoliang Tan; Plasma-optimized contact for high-performance PdSe2 nanoflake-based field-effect transistors. Appl. Phys. Lett. 24 July 2023; 123 (4): 042104. https://doi.org/10.1063/5.0160944
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