We study the effects of compressive and tensile biaxial strain on direct and phonon-assisted Auger–Meitner recombination (AMR) in silicon using first-principles calculations. We find that the application of strain has a non-trivial effect on the AMR rate. For most AMR processes, the application of strain increases the AMR rate. However, the recombination rate for the AMR process involving two holes and one electron is suppressed by 38% under tensile strain. We further analyze the specific phonon contributions that mediate the phonon-assisted AMR mechanism, demonstrating the increased anisotropy under strain. Our results indicate that the application of tensile strain increases the lifetime of minority electron carriers in p-type silicon and can be leveraged to improve the efficiency of silicon devices.
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25 December 2023
Research Article|
December 27 2023
Strain effects on Auger–Meitner recombination in silicon
Kyle Bushick
;
Kyle Bushick
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Software, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
Department of Materials Science and Engineering, University of Michigan
, Ann Arbor, Michigan 48109, USA
2
Materials Science Division, Lawrence Livermore National Laboratory
, Livermore, California 94550, USA
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Emmanouil Kioupakis
Emmanouil Kioupakis
a)
(Conceptualization, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Supervision, Validation, Writing – review & editing)
1
Department of Materials Science and Engineering, University of Michigan
, Ann Arbor, Michigan 48109, USA
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 123, 262105 (2023)
Article history
Received:
September 18 2023
Accepted:
December 13 2023
Citation
Kyle Bushick, Emmanouil Kioupakis; Strain effects on Auger–Meitner recombination in silicon. Appl. Phys. Lett. 25 December 2023; 123 (26): 262105. https://doi.org/10.1063/5.0176950
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