We describe the development of an extreme ultraviolet (EUV) light source using a discharged produced plasma. The source uses a xenon plasma in a Z-pinch configuration to produce 13.5 nm ± 1% bandwidth radiation. The source is used in the semiconductor industry for metrology, mask inspection, and resist development. Based on the previously developed inductively coupled Z-pinch design, this improved source uses an innovative transistor-based switching system that overcomes the limitations of traditional magnetically switched systems. With this configuration, which includes a pre-ionization stage and direct xenon fueling, both repetition rate and energy per pulse can be greatly increased. Consequently, EUV radiation output, measured in brightness or power, can be also be increased. We describe the driver for this system and the resulting performance.

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