We report high-quality Ga2O3 grown on an AlGaN/AlN/Sapphire in a single growth run in the same Metal Organic Chemical Vapor Deposition reactor with an AlOx interlayer at the Ga2O3/AlGaN interface. AlOx interlayer was found to enable the growth of single crystalline Ga2O3 on AlGaN in spite of the high lattice mismatch between the two material systems. The resulting nitride/oxide heterogenous heterostructures showed superior material qualities, which were characterized by structural, electrical, and optical characterization techniques. In particular, a significant enhancement of the electron mobility of the nitride/oxide heterogenous heterostructure is reported when compared to the individual electron mobilities of the Ga2O3 epilayer on the sapphire substrate and the AlGaN/AlN heterostructure on the sapphire substrate. This enhanced mobility marks a significant step in realizing the next generation of power electronic devices and transistors.

1.
S. J.
Pearton
,
J.
Yang
,
P. H.
Cary
IV
,
F.
Ren
,
J.
Kim
,
M. J.
Tadjer
, and
M. A.
Mastro
,
Appl. Phys. Rev.
5
(
1
),
011301
(
2018
).
2.
M. J.
Tadjer
,
Science
378
(
6621
),
724
725
(
2022
).
3.
H. P.
Lee
,
J.
Perozek
,
L. D.
Rosario
, and
C.
Bayram
,
Sci. Rep.
6
(
1
),
37588
(
2016
).
4.
M.
Kuzuhara
,
J. T.
Asubar
, and
H.
Tokuda
,
Jpn. J. Appl. Phys., Part 1
55
(
7
),
070101
(
2016
).
5.
A.
Yasan
,
R.
McClintock
,
K.
Mayes
,
D.
Shiell
,
L.
Gautero
,
S. R.
Darvish
,
P.
Kung
, and
M.
Razeghi
,
Appl. Phys. Lett.
83
(
23
),
4701
4703
(
2003
).
6.
C.
Bayram
,
F. H.
Teherani
,
D. J.
Rogers
, and
M.
Razeghi
,
Appl. Phys. Lett.
93
(
8
),
081111
(
2008
).
7.
P.
Kung
,
A.
Saxler
,
D.
Walker
,
A.
Rybaltowski
,
X.
Zhang
,
J.
Diaz
, and
M.
Razeghi
,
Mater. Res. Soc. Internet J. Nitride Semicond. Res.
3
,
e1
(
1998
).
8.
L.
Gautam
,
A. G.
Jaud
,
J.
Lee
,
G. J.
Brown
, and
M.
Razeghi
,
IEEE J. Quantum Electron.
57
(
2
),
1
6
(
2021
).
9.
K.
Dovidenko
,
S.
Oktyabrsky
,
J.
Narayan
, and
M.
Razeghi
,
J. Appl. Phys.
79
(
5
),
2439
2445
(
1996
).
10.
R.
Roy
,
V.
Hill
, and
E.
Osborn
,
J. Am. Chem. Soc.
74
(
3
),
719
722
(
1952
).
11.
M. B.
Maccioni
and
V.
Fiorentini
,
Appl. Phys. Express
9
(
4
),
041102
(
2016
).
12.
H.
Nishinaka
,
N.
Miyauchi
,
D.
Tahara
,
S.
Morimoto
, and
M.
Yoshimoto
,
CrystEngComm
20
(
13
),
1882
1888
(
2018
).
13.
K. D.
Chabak
,
N.
Moser
,
A. J.
Green
,
D. E.
Walker
, Jr.
,
S. E.
Tetlak
,
E.
Heller
,
A.
Crespo
,
R.
Fitch
,
J. P.
McCandless
,
K.
Leedy
,
M.
Baldini
,
G.
Wagner
,
Z.
Galazka
,
X.
Li
, and
G.
Jessen
,
Appl. Phys. Lett.
109
(
21
),
213501
(
2016
).
14.
D.
Liu
,
C.
Sang June
,
J.-H.
Seo
,
K.
Kim
,
M.
Kim
,
J.
Shi
,
X.
Yin
,
W.
Choi
,
C.
Zhang
,
J.
Kim
,
M.
Asadolahi Baboli
,
J.
Park
,
J.
Bong
,
I.
Lee
,
J.
Gong
,
S.
Mikael
,
J.
Ryu
,
P.
Katal Mohseni
,
X.
Li
, and
Z.
Ma
, “
Lattice-mismatched semiconductor heterostructures
,” arXiv:1812.10225 (
2018
).
15.
J.
Lee
,
H.
Kim
,
L.
Gautam
,
K.
He
,
X.
Hu
,
V. P.
Dravid
, and
M.
Razeghi
,
Photonics
8
(
1
),
17
(
2021
).
16.
Y.
Xu
,
J.-H.
Park
,
Z.
Yao
,
C.
Wolverton
,
M.
Razeghi
,
J.
Wu
, and
V. P.
Dravid
,
ACS Appl. Mater. Interfaces
11
(
5
),
5536
5543
(
2019
).
17.
K.
Song
,
H.
Zhang
,
H.
Fu
,
C.
Yang
,
R.
Singh
,
Y.
Zhao
,
H.
Sun
, and
S.
Long
,
J. Phys. D: Appl. Phys.
53
(
34
),
345107
(
2020
).
18.
S.
Leone
,
R.
Fornari
,
M.
Bosi
,
V.
Montedoro
,
L.
Kirste
,
P.
Doering
,
F.
Benkhelifa
,
M.
Prescher
,
C.
Manz
,
V.
Polyakov
, and
O.
Ambacher
,
J. Cryst. Growth
534
,
125511
(
2020
).
19.
J.
Lee
,
H.
Kim
,
L.
Gautam
, and
M.
Razeghi
,
Coatings
11
(
3
),
287
(
2021
).
20.
J.
Lee
,
L.
Gautam
,
F. H.
Teherani
,
E. V.
Sandana
,
P.
Bove
,
D. J.
Rogers
, and
M.
Razeghi
,
Phys. Status Solidi A
220
(
8
),
2200559
(
2023
).
21.
J.
Lee
,
H.
Kim
,
L.
Gautam
, and
M.
Razeghi
,
Crystals
11
(
4
),
446
(
2021
).
22.
N.
Nepal
,
J.
Li
,
M. L.
Nakarmi
,
J. Y.
Lin
, and
H. X.
Jiang
,
Appl. Phys. Lett.
87
(
24
),
242104
(
2005
).
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