A detailed study comparing defect incorporation between laser-assisted metal-organic chemical vapor deposition (MOCVD)-grown GaN and conventional low- and high-growth-rate MOCVD GaN was conducted. Using deep-level transient and optical spectroscopy, traps throughout the bandgap were characterized where traps were found at EC-0.25 eV, EC-0.57 eV, EC-0.72 eV, EC-0.9 eV, EC-1.35 eV, EC-2.6 eV, and EC-3.28 eV in all three samples. This indicates no new traps were observed in the laser-assisted MOCVD GaN sample. Overall, the trap concentrations in the laser-assisted MOCVD sample were ∼2× higher than the optimal low-growth-rate sample, but this is primarily due to the increase in gallium vacancy EC-2.6 eV and carbon-related EC-3.28 eV trap concentrations. The EC-0.9 eV trap concentration was ∼2× higher in the laser-assisted sample, so proton irradiation experiments were conducted to identify the physical source of this level. The results indicated this was a native point defect likely related to gallium interstitials. Overall, this study shows that the laser-assisted MOCVD growth method is promising for future thick, high-quality GaN epilayers after further growth optimizations.
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Trap characterization of high-growth-rate laser-assisted MOCVD GaN
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11 September 2023
Research Article|
September 11 2023
Trap characterization of high-growth-rate laser-assisted MOCVD GaN
Wenbo Li
;
Wenbo Li
(Conceptualization, Formal analysis, Investigation, Writing – original draft, Writing – review & editing)
1
Department of Electrical and Computer Engineering, The Ohio State University
, Columbus, Ohio 43210, USA
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Yuxuan Zhang
;
Yuxuan Zhang
(Resources, Writing – review & editing)
1
Department of Electrical and Computer Engineering, The Ohio State University
, Columbus, Ohio 43210, USA
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Zhaoying Chen
;
Zhaoying Chen
(Resources)
1
Department of Electrical and Computer Engineering, The Ohio State University
, Columbus, Ohio 43210, USA
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Hongping Zhao
;
Hongping Zhao
(Conceptualization, Formal analysis, Funding acquisition, Resources, Writing – review & editing)
1
Department of Electrical and Computer Engineering, The Ohio State University
, Columbus, Ohio 43210, USA
2
Department of Materials Science and Engineering, The Ohio State University
, Columbus, Ohio 43210, USA
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Steven A. Ringel
;
Steven A. Ringel
(Funding acquisition, Resources, Supervision, Writing – review & editing)
1
Department of Electrical and Computer Engineering, The Ohio State University
, Columbus, Ohio 43210, USA
2
Department of Materials Science and Engineering, The Ohio State University
, Columbus, Ohio 43210, USA
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Aaron R. Arehart
Aaron R. Arehart
a)
(Conceptualization, Formal analysis, Funding acquisition, Investigation, Resources, Supervision, Writing – original draft, Writing – review & editing)
1
Department of Electrical and Computer Engineering, The Ohio State University
, Columbus, Ohio 43210, USA
a)Author to whom correspondence should be addressed: arehart.5@osu.edu
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a)Author to whom correspondence should be addressed: arehart.5@osu.edu
Appl. Phys. Lett. 123, 112101 (2023)
Article history
Received:
May 24 2023
Accepted:
August 23 2023
Citation
Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart; Trap characterization of high-growth-rate laser-assisted MOCVD GaN. Appl. Phys. Lett. 11 September 2023; 123 (11): 112101. https://doi.org/10.1063/5.0159560
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