We present a detailed model of the static and dynamic gate leakage current in lateral β-Ga2O3 MOSFETs with an Al2O3 gate insulator, covering a wide temperature range. We demonstrate that (i) in the DC regime, current originates from Poole–Frenkel conduction (PFC) in forward bias at high-temperature, while (ii) at low temperature the conduction is dominated by Fowler–Nordheim tunneling. Furthermore, (iii) we modeled the gate current transient during a constant gate stress as effect of electron trapping in deep levels located in the oxide that inhibits the PF conduction mechanism. This hypothesis was supported by a TCAD model that accurately reproduces the experimental results.
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric
Manuel Fregolent, Enrico Brusaterra, Carlo De Santi, Kornelius Tetzner, Joachim Würfl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini; Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric. Appl. Phys. Lett. 4 September 2023; 123 (10): 103504. https://doi.org/10.1063/5.0154878
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