In this work, we performed systematic electrical characterization and analysis of indium–gallium–zinc oxide (IGZO) Schottky-barrier thin-film transistors (SBTFTs) with different Cu-based Schottky contact structures. It was found that the Schottky barrier height (ΦB) between the IGZO layer and the Cu electrode could be modulated notably by changing the thickness of the AlOx tunnel layer, and the variation in ΦB significantly changed the saturation drain current (Idsat) of the IGZO SBTFTs based on the Schottky contacts but only had a minor influence on the saturation voltage (Vdsat) of the devices. Furthermore, Cu/Al stacked source/drain electrodes and silicon nitride (SiNx) passivation were employed to tailor the contact resistance and channel resistance of the IGZO SBTFTs, which led to an increase in Idsat and a variation in Vdsat. A universal resistance–capacitance network model was proposed to explain the observed evolution of Vdsat of the SBTFTs with different device structures. This work provides meaningful insight into developing low-cost metal oxide SBTFTs with tailored device performances.
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Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts
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4 September 2023
Research Article|
September 06 2023
Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts
Yuzhi Li
;
Yuzhi Li
(Conceptualization, Funding acquisition, Investigation, Methodology, Supervision, Writing – original draft, Writing – review & editing)
1
Institute of Semiconductors, Guangdong Academy of Sciences
, Guangzhou 510650, China
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Yue Zhou;
Yue Zhou
(Investigation)
1
Institute of Semiconductors, Guangdong Academy of Sciences
, Guangzhou 510650, China
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Shenghan Zou;
Shenghan Zou
(Formal analysis, Investigation, Visualization)
1
Institute of Semiconductors, Guangdong Academy of Sciences
, Guangzhou 510650, China
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Linfeng Lan
;
Linfeng Lan
(Formal analysis, Visualization, Writing – review & editing)
2
State Key Laboratory of Luminescent Materials and Devices, South China University of Technology
, Guangzhou 510640, China
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Zheng Gong
Zheng Gong
a)
(Conceptualization, Funding acquisition, Supervision, Writing – review & editing)
1
Institute of Semiconductors, Guangdong Academy of Sciences
, Guangzhou 510650, China
a)Author to whom correspondence should be addressed: zheng_gong@gdisit.com
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a)Author to whom correspondence should be addressed: zheng_gong@gdisit.com
Appl. Phys. Lett. 123, 103503 (2023)
Article history
Received:
May 21 2023
Accepted:
August 22 2023
Citation
Yuzhi Li, Yue Zhou, Shenghan Zou, Linfeng Lan, Zheng Gong; Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts. Appl. Phys. Lett. 4 September 2023; 123 (10): 103503. https://doi.org/10.1063/5.0159184
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