In this work, we present the magneto-ionic response to ionic liquid gating in Ta/CoFeB/MgO/HfO2 stacks, where heavy metal dusting layers of Ta, W, and Pt are inserted at the Ta/CoFeB and CoFeB/MgO interfaces. Dusting layers of W inserted at the Ta/CoFeB interface increase perpendicular magnetic anisotropy (PMA) by more than 50%, while no significant changes are seen for Pt. In these samples, gating cannot break the PMA seeded at the CoFeB/MgO interface, only relatively small changes in the coercivity can be induced, about 20% for Ta and Pt and 6% for W. At the CoFeB/MgO interface, a significant quenching of the magnetization is seen when W and Ta dusting layers are inserted, which remains unchanged after gating, suggesting a critical deterioration of the CoFeB. In contrast, Pt dusting layers result in an in-plane anisotropy that can be reversibly converted to PMA through magneto-ionic gating while preserving the polycrystalline structure of the MgO layer. This shows that dusting layers can be effectively used not only to engineer magnetic properties in multilayers but also to strongly modify their magneto-ionic performance.
Controlling interface anisotropy in CoFeB/MgO/HfO2 using dusting layers and magneto-ionic gating
Note: This paper is part of the APL Special Collection on Magneto-ionic and electrostatic gating of magnetism: Phenomena and devices.
T. Bhatnagar-Schöffmann, A. Kovàcs, R. Pachat, D. Ourdani, A. Lamperti, M.-A. Syskaki, T. da Câmara Santa Clara Gomes, Y. Roussigné, S. Ono, J. Langer, M. Cherif, R. E. Dunin-Borkowski, P. Schöffmann, D. Ravelosona, M. Belmeguenai, A. Solignac, L. Herrera Diez; Controlling interface anisotropy in CoFeB/MgO/HfO2 using dusting layers and magneto-ionic gating. Appl. Phys. Lett. 23 January 2023; 122 (4): 042402. https://doi.org/10.1063/5.0132870
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