2D transition metal dichalcogenides such as MoS2 are promising candidates for optoelectronics because of atomically thin nature and strong light–matter interaction. However, the poor light absorption limited their photodetection performance. Surface plasma resonance (SPR) can improve light absorption, but the defects introduced during the metal deposition process limit their responsivity and response time. In this work, we transfer a plasmonic Au array onto MoS2 surface, in which van der Waals (vdWs) contact forms between defect-free Au array–MoS2 interface. The Au/MoS2 heterostructure photodetector performs 1.8 ms rising time, 186.6 A/W responsivity, and 1.41 × 1012 Jones detectivity. The damage free vdWs fabrication method also makes it possible to integrate the engineered SPR Au array with functional polymer for flexible electronics. Thus, a vdWs plasmonic Au array/MoS2/P(VDF-TrFE) photodetector with a 1.28 × 103 rectification ratio has been obtained. This approach not only optimizes the performance of the 2D optoelectronic devices but also expands the scope of its potential applications.
Van der Waals integrated plasmonic Au array for self-powered MoS2 photodetector
Mengru Zhang, Guang Zeng, Guangjian Wu, Jinhua Zeng, Yize Sun, Chao Li, Lei Liu, Jianlu Wang, Hong-Liang Lu, Yang Chai, Jingli Wang; Van der Waals integrated plasmonic Au array for self-powered MoS2 photodetector. Appl. Phys. Lett. 19 June 2023; 122 (25): 253503. https://doi.org/10.1063/5.0151147
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