2D transition metal dichalcogenides such as MoS2 are promising candidates for optoelectronics because of atomically thin nature and strong light–matter interaction. However, the poor light absorption limited their photodetection performance. Surface plasma resonance (SPR) can improve light absorption, but the defects introduced during the metal deposition process limit their responsivity and response time. In this work, we transfer a plasmonic Au array onto MoS2 surface, in which van der Waals (vdWs) contact forms between defect-free Au array–MoS2 interface. The Au/MoS2 heterostructure photodetector performs 1.8 ms rising time, 186.6 A/W responsivity, and 1.41 × 1012 Jones detectivity. The damage free vdWs fabrication method also makes it possible to integrate the engineered SPR Au array with functional polymer for flexible electronics. Thus, a vdWs plasmonic Au array/MoS2/P(VDF-TrFE) photodetector with a 1.28 × 103 rectification ratio has been obtained. This approach not only optimizes the performance of the 2D optoelectronic devices but also expands the scope of its potential applications.
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Van der Waals integrated plasmonic Au array for self-powered MoS2 photodetector
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19 June 2023
Research Article|
June 23 2023
Van der Waals integrated plasmonic Au array for self-powered MoS2 photodetector
Special Collection:
Critical Issues on the 2D-material-based field-effect transistors
Mengru Zhang
;
Mengru Zhang
(Data curation, Formal analysis, Writing – original draft, Writing – review & editing)
1
State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University
, Shanghai 200433, China
2
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University
, Shanghai 200433, China
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Guang Zeng
;
Guang Zeng
(Software, Writing – original draft)
2
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University
, Shanghai 200433, China
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Guangjian Wu
;
Guangjian Wu
(Resources)
1
State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University
, Shanghai 200433, China
3
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
, 500 Yu Tian Road, Shanghai 200083, China
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Jinhua Zeng
;
Jinhua Zeng
(Resources)
3
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
, 500 Yu Tian Road, Shanghai 200083, China
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Yize Sun
;
Yize Sun
(Resources)
1
State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University
, Shanghai 200433, China
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Chao Li
;
Chao Li
(Resources)
1
State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University
, Shanghai 200433, China
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Lei Liu;
Lei Liu
(Formal analysis)
1
State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University
, Shanghai 200433, China
2
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University
, Shanghai 200433, China
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Jianlu Wang
;
Jianlu Wang
(Resources)
1
State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University
, Shanghai 200433, China
3
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
, 500 Yu Tian Road, Shanghai 200083, China
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Hong-Liang Lu
;
Hong-Liang Lu
a)
(Resources)
2
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University
, Shanghai 200433, China
a)Authors to whom correspondence should be addressed: jliwang@fudan.edu.cn; honglianglu@fudan.edu.cn; and ychai@polyu.edu.hk
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Yang Chai
;
Yang Chai
a)
(Supervision, Writing – review & editing)
4
Department of Applied Physics, The Hong Kong Polytechnic University Hung Hom
, Kowloon, Hong Kong, China
a)Authors to whom correspondence should be addressed: jliwang@fudan.edu.cn; honglianglu@fudan.edu.cn; and ychai@polyu.edu.hk
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Jingli Wang
Jingli Wang
a)
(Funding acquisition, Investigation, Writing – review & editing)
1
State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University
, Shanghai 200433, China
a)Authors to whom correspondence should be addressed: jliwang@fudan.edu.cn; honglianglu@fudan.edu.cn; and ychai@polyu.edu.hk
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a)Authors to whom correspondence should be addressed: jliwang@fudan.edu.cn; honglianglu@fudan.edu.cn; and ychai@polyu.edu.hk
Note: This paper is part of the APL Special Collection on Critical Issues on the 2D-material-based field-effect transistors.
Appl. Phys. Lett. 122, 253503 (2023)
Article history
Received:
March 19 2023
Accepted:
June 03 2023
Citation
Mengru Zhang, Guang Zeng, Guangjian Wu, Jinhua Zeng, Yize Sun, Chao Li, Lei Liu, Jianlu Wang, Hong-Liang Lu, Yang Chai, Jingli Wang; Van der Waals integrated plasmonic Au array for self-powered MoS2 photodetector. Appl. Phys. Lett. 19 June 2023; 122 (25): 253503. https://doi.org/10.1063/5.0151147
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