Placing a sensor close to the target at the nano-level is a central challenge in quantum sensing. We demonstrate magnetic field imaging with a boron vacancy ( V B ) defects array in hexagonal boron nitride with a few 10 nm thickness. V B sensor spots with a size of (100 nm)2 are arranged periodically with nanoscale accuracy using a helium ion microscope and attached tightly to a gold wire. The sensor array allows us to visualize the magnetic field induced by the current in the straight micro wire with a high spatial resolution. Each sensor exhibits a practical sensitivity of 73.6 μ T / Hz 0.5, suitable for quantum materials research. Our technique of arranging V B quantum sensors periodically and tightly on measurement targets will maximize their potential.

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