It is shown that the electrical transport in quantum dot (QD) constituted films, synthesized through electrochemical doping, could be described through a two-step model considering (i) the tunneling transport of electrons from an electron source, and subsequent (ii) Ohmic transport through the film governed by a temperature (T) dependent mobility (μ), varying as T−α. A transfer matrix algorithm based approach for electrical field induced tunneling and α ∼ 1, was used. The indicated modeling principles could be deployed to predict the current–voltage characteristics of QD films and assemblies coupled to metallic electrodes.
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