Growing a thick high-quality epitaxial layer on the β-Ga2O3 substrate is crucial in commercializing β-Ga2O3 devices. Metal organic chemical vapor deposition (MOCVD) is also well-established for the large-scale commercial growth of β-Ga2O3 and related heterostructures. This paper presents a systematic study of the Schottky barrier diodes fabricated on two different Si-doped homoepitaxial β-Ga2O3 thin films grown on Sn-doped (001) and (010) β-Ga2O3 substrates by MOCVD. X-ray diffraction analysis of the MOCVD-grown sample, room temperature current density–voltage data for different Schottky diodes, and C–V measurements are presented. Diode characteristics, such as ideality factor, barrier height, specific on-resistance, and breakdown voltage, are studied. Temperature dependence (170–360 K) of the ideality factor, barrier height, and Poole–Frenkel reverse leakage mechanism are also analyzed from the J–V–T characteristics of the fabricated Schottky diodes.
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5 June 2023
Research Article|
June 07 2023
Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD
Prakash P. Sundaram
;
Prakash P. Sundaram
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Software, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Fengdeng Liu
;
Fengdeng Liu
(Data curation, Formal analysis, Investigation, Writing – review & editing)
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
2
Department of Chemical Engineering and Materials Science, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Fikadu Alema
;
Fikadu Alema
(Conceptualization, Data curation, Investigation, Resources, Writing – review & editing)
3
Agnitron Technology Incorporated
, Chanhassen, Minnesota 55317, USA
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Andrei Osinsky
;
Andrei Osinsky
(Conceptualization, Funding acquisition, Resources, Writing – review & editing)
3
Agnitron Technology Incorporated
, Chanhassen, Minnesota 55317, USA
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Bharat Jalan
;
Bharat Jalan
(Resources, Supervision, Writing – review & editing)
2
Department of Chemical Engineering and Materials Science, University of Minnesota
, Minneapolis, Minnesota 55455, USA
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Steven J. Koester
Steven J. Koester
a)
(Conceptualization, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Supervision, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
Department of Electrical and Computer Engineering, University of Minnesota
, Minneapolis, Minnesota 55455, USA
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 122, 232105 (2023)
Article history
Received:
April 21 2023
Accepted:
May 26 2023
Citation
Prakash P. Sundaram, Fengdeng Liu, Fikadu Alema, Andrei Osinsky, Bharat Jalan, Steven J. Koester; Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD. Appl. Phys. Lett. 5 June 2023; 122 (23): 232105. https://doi.org/10.1063/5.0155622
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