Further scaling of dynamic random-access memory (DRAM) faces critical challenges because of the lack of materials with both high dielectric constant and low leakage. In this work, engineering Hf1−xZrxO2 (HZO) films to the morphotropic phase boundary (MPB) and inserting Al2O3 interface layers with a wide bandgap are utilized to overcome this bottleneck. By tuning Zr composition and the woken-up process, the ratio of tetragonal and orthorhombic phases is manipulated to achieve the desired high dielectric constant MPB state. On this basis, Al2O3 ultrathin layers are inserted to further enhance the dielectric constant as well as reduce the leakage current. As a result, a high dielectric constant of ∼ 46.7 (equivalent oxide thickness ∼ 5.1 Å) and low leakage current density (<10−7 A/cm2 at ±0.5 V) are achieved in TiN/Al2O3 (0.2 nm)/Hf0.5Zr0.5O2 (5.6 nm)/Al2O3 (0.3 nm)/TiN capacitors. Furthermore, long dielectric breakdown time of the heterostructure confirms its application potential. These results are useful for developing next generation DRAM capacitor devices.
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8 May 2023
Research Article|
May 11 2023
5.1 Å EOT and low leakage TiN/Al2O3/Hf0.5Zr0.5O2/Al2O3/TiN heterostructure for DRAM capacitor
Zhen Luo
;
Zhen Luo
(Conceptualization, Formal analysis, Investigation, Writing – original draft, Writing – review & editing)
1
Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
, Hefei 230026, China
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Xinzhe Du
;
Xinzhe Du
(Formal analysis, Investigation, Writing – original draft, Writing – review & editing)
1
Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
, Hefei 230026, China
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Hui Gan;
Hui Gan
(Formal analysis, Writing – original draft, Writing – review & editing)
1
Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
, Hefei 230026, China
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Yue Lin;
Yue Lin
(Investigation, Writing – original draft, Writing – review & editing)
1
Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
, Hefei 230026, China
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Wensheng Yan
;
Wensheng Yan
(Investigation, Writing – original draft, Writing – review & editing)
2
National Synchrotron Radiation Laboratory, University of Science and Technology of China
, Hefei 230029, China
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Shengchun Shen
;
Shengchun Shen
(Conceptualization, Formal analysis, Funding acquisition, Writing – original draft, Writing – review & editing)
1
Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
, Hefei 230026, China
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Yuewei Yin
;
Yuewei Yin
a)
(Conceptualization, Formal analysis, Funding acquisition, Writing – original draft, Writing – review & editing)
1
Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
, Hefei 230026, China
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Xiaoguang Li
Xiaoguang Li
a)
(Conceptualization, Formal analysis, Funding acquisition, Supervision, Writing – original draft, Writing – review & editing)
1
Hefei National Research Center for Physical Sciences at the Microscale, Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China
, Hefei 230026, China
3
Collaborative Innovation Center of Advanced Microstructures, Nanjing University
, Nanjing 210093, China
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Appl. Phys. Lett. 122, 192903 (2023)
Article history
Received:
February 08 2023
Accepted:
April 28 2023
Citation
Zhen Luo, Xinzhe Du, Hui Gan, Yue Lin, Wensheng Yan, Shengchun Shen, Yuewei Yin, Xiaoguang Li; 5.1 Å EOT and low leakage TiN/Al2O3/Hf0.5Zr0.5O2/Al2O3/TiN heterostructure for DRAM capacitor. Appl. Phys. Lett. 8 May 2023; 122 (19): 192903. https://doi.org/10.1063/5.0145824
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