Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate stable RTN in planar bulk-Si metal-oxide-semiconductor (MOS) transistors and in Si fin field-effect transistors (FinFETs). In these cases, pre-existing defects in the ultrathin gate dielectrics dominate the device low-frequency 1/f noise (LFN). In contrast, III–V MOS devices with lower quality oxide/semiconductor interfaces show significant increases in LFN at much lower doses, due to the TID-induced activation of high densities of border traps. Aggressively scaled devices fabricated in Si gate-all-around nano-wire FET technology exhibit prominent defects leading to LFN and RTN. Increases or decreases of LFN in these devices during irradiation and annealing results primarily from the activation or passivation of border traps and interface traps.
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Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
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24 April 2023
Research Article|
April 27 2023
Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
Special Collection:
Electronic Noise: From Advanced Materials to Quantum Technologies
S. Bonaldo
;
S. Bonaldo
a)
(Conceptualization, Visualization, Writing – original draft)
1
Department of Information Engineering, University of Padova
, Padova 35131, Italy
a)Author to whom correspondence should be addressed: stefano.bonaldo@unipd.it
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D. M. Fleetwood
D. M. Fleetwood
(Conceptualization, Writing – review & editing)
2
Department of Electrical and Computer Engineering, Vanderbilt University
, Nashville, Tennessee 37235, USA
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a)Author to whom correspondence should be addressed: stefano.bonaldo@unipd.it
Note: This paper is part of the APL Special Collection on Electronic Noise: From Advanced Materials to Quantum Technologies.
Appl. Phys. Lett. 122, 173508 (2023)
Article history
Received:
February 23 2023
Accepted:
April 17 2023
Citation
S. Bonaldo, D. M. Fleetwood; Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation. Appl. Phys. Lett. 24 April 2023; 122 (17): 173508. https://doi.org/10.1063/5.0147587
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