Interface traps generally are not considered to be likely sources of low-frequency (LF) noise and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices because the longer carrier exchange times of border traps are more consistent with experimental observations. In contrast, correlated mobility fluctuations due to remote Coulomb scattering from charged border traps cannot explain the unexpectedly large LF noise and/or RTN observed in some MOS devices. In this Letter it is proposed that equilibrium fluctuations in interface-trap concentrations caused by hydrogen-induced activation and passivation reactions can lead to enhanced LF noise and RTN. This mechanism adds to other noise sources, including border traps, random dopants, and bulk-Si defect clusters.
Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors
Note: This paper is part of the APL Special Collection on Electronic Noise: From Advanced Materials to Quantum Technologies.
D. M. Fleetwood; Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors. Appl. Phys. Lett. 24 April 2023; 122 (17): 173504. https://doi.org/10.1063/5.0146549
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