In this work, the time-dependent behaviors of dual-channel amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) under negative bias illumination stress (NBIS) are systematically discussed. The dual-channel comprised two different IGZO layers fabricated by tuning the oxygen flow during deposition. The presence of heterojunctions enhanced field-effect mobility by 1.5× owing to the confinement of carriers in buried channels because of an energy barrier. However, after long periods of NBIS stress, the degradation of a-IGZO TFTs resulted in the entrapment of photo-generated electron–hole pairs at interface defects. The conduction path migrated to the surface channel. Results from extracting the hysteresis window and utilizing capacitance–voltage measurements have indicated a channel migration phenomenon due to the entrapment of electrons and holes at the surface and buried channel interfaces.
Channel migration of dual channel a-InGaZnO TFTs under negative bias illumination stress
Note: This paper is part of the APL Special Collection on Metal Oxide Thin-Film Electronics.
Han-Yu Chang, Ting-Chang Chang, Mao-Chou Tai, Bo-Shen Huang, Kuan-Ju Zhou, Yu-Bo Wang, Hung-Ming Kuo, Jen-Wei Huang; Channel migration of dual channel a-InGaZnO TFTs under negative bias illumination stress. Appl. Phys. Lett. 20 March 2023; 122 (12): 123504. https://doi.org/10.1063/5.0135302
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