In this work, top-gate structured W: F co-doped Zn–Sn–O (ZTO) thin-film transistors (TFTs) with excellent stability are prepared by the solution process. Comparing with the undoped ZTO TFT, the mobility of W: F co-doped ZTO TFTs was up from 1.87 to 3.14 cm2 V−1 s−1, and the subthreshold swing decreases from 0.192 to 0.157 V/dec. Moreover, the W: F co-doped ZTO TFTs exhibit a small Vth shift of −0.09 V under negative bias illumination stress, which is close to one of the TFTs prepared by the traditional vacuum process. X-ray photoelectron spectroscopy and capacitance–voltage examination revealed that the enhanced stability is due to the fact that W: F co-doping can effectively suppress defect states in ZTO films. The results manifest that W: F co-doping may be a promising method for enhancing the stability of TFTs with the top-gate structure.
Solution-processed high stability top-gate W and F co-doped ZnSnO thin film transistors
Note: This paper is part of the APL Special Collection on Metal Oxide Thin-Film Electronics.
Sunjie Hu, Meng Xu, Cong Peng, Longlong Chen, Hai Liu, Xifeng Li; Solution-processed high stability top-gate W and F co-doped ZnSnO thin film transistors. Appl. Phys. Lett. 20 March 2023; 122 (12): 123502. https://doi.org/10.1063/5.0137931
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