Transition metal dichalcogenide based 2D/2D or 2D/3D van der Waals heterostructures exhibit superior properties for high-performance electronics, tunneling transistors, and catalysts. Here, we report on the fabrication of high quality 2D/3D MoS2/MoO2 heterostructures with an atomic clean interface by one-step chemical vapor deposition. Optical microscopy, atomic force microscopy, Raman spectroscopy, scanning electron microscopy, and energy dispersive spectroscopy measurements reveal the high-quality of as-grown samples and the specific epitaxial relationship between MoS2 and MoO2: MoS2//MoO2 and MoS2//MoO2. Photoluminescence and Kelvin probe force microscopy measurements combined with density functional theory calculations confirm the interfacial charge transfer from MoS2 to the underlying MoO2. Furthermore, MoO2 induced in-plane anisotropy in MoS2 was revealed using angle-resolved polarized Raman and photoluminescence spectroscopy with anisotropic ratios of 1.27 (Raman) and 1.29 (photoluminescence), respectively, which is most possibly attributed to anisotropic interfacial charge interactions. Our findings provide an excellent platform for the investigation on interfacial effects. Moreover, the in-plane anisotropy in MoS2 induced by MoO2 has expanded the application of isotropic MoS2 in the polarization-dependent fields.
In-plane anisotropy in van der Waals epitaxial MoS2 on MoO2(010)
Note: This paper is part of the APL Special Collection on Metal Oxide Thin-Film Electronics.
Dingbang Yang, Junjie Jiang, Jiaxin Chen, Xiao Guo, Xinhui Yang, Xiaoming Zheng, Chuyun Deng, Haipeng Xie, Fei Song, Fangping Ouyang, Xiaoming Yuan, Mingxing Chen, Han Huang; In-plane anisotropy in van der Waals epitaxial MoS2 on MoO2(010). Appl. Phys. Lett. 13 March 2023; 122 (11): 111602. https://doi.org/10.1063/5.0138660
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