Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells

We report on transport characteristics of field effect two-dimensional electron gases (2DEGs) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus is observed to filling factor ν = 1 in magnetic fields of up to B = 18 T. We show that the electron density is gate-tunable, reproducible, and stable from pinch-off to 4 $×1011$ cm⁻², and peak mobilities exceed 24 000 cm²/V s. Large Rashba spin–orbit coefficients up to 110 meV $·$Å are obtained through weak anti-localization measurements. An effective mass of 0.019m_e is determined from temperature-dependent magnetoresistance measurements, and a g-factor of 41 at a density of 3.6 $×1011$ cm⁻² is obtained from coincidence measurements in tilted magnetic fields. By comparing two heterostructures with and without a delta-doped layer beneath the quantum well, we find that the carrier density is stable with time when doping in the ternary Al_0.1In_0.9Sb barrier is not present. Finally, the effect of modulation doping on structural asymmetry between the two heterostructures is characterized.