Understanding and facilitating defects in two-dimensional transition metal dichalcogenides (TMDCs) are of fundamental importance for their application in optoelectronic devices and valleytronic devices. In this study, swift heavy ion (SHI) irradiation was applied to introduce defects in monolayer WSe2 in a controlled manner. Temperature-dependent photoluminescence and transient absorption spectroscopy are employed to investigate the excitonic performances in defective WSe2. It is observed that the trion emission rises up alongside exciton emission for WSe2 irradiated with elevated ion fluences. Defects introduced by SHI irradiation can strongly localize carriers and weaken the exciton–phonon coupling and further affect the optical signatures of the excitons. Photoexcited electron–hole pairs were suppressed to form excitons due to the weaken phonon scattering, and the population of exciton was reduced for the irradiated WSe2. These results reveal that SHI irradiation is an effective technique to explore defect dependence of exciton formation and evolution dynamics in TMDCs, which have important implications for various optoelectronic applications.
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22 August 2022
Research Article|
August 23 2022
Excitonic performance and ultrafast dynamics in defective WSe2
Special Collection:
Phononics of Graphene, Layered Materials, and Heterostructures
Shengxia Zhang
;
Shengxia Zhang
a)
(Conceptualization, Funding acquisition, Investigation, Writing – original draft)
1
Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences (CAS)
, Lanzhou 730000, People's Republic of China
2
University of Chinese Academy of Sciences
, Beijing 100049, People's Republic of China
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Lijun Xu;
Lijun Xu
(Investigation, Methodology)
1
Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences (CAS)
, Lanzhou 730000, People's Republic of China
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Peipei Hu;
Peipei Hu
(Investigation)
1
Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences (CAS)
, Lanzhou 730000, People's Republic of China
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Khan Maaz;
Khan Maaz
(Writing – review & editing)
1
Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences (CAS)
, Lanzhou 730000, People's Republic of China
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Jian Zeng
;
Jian Zeng
(Investigation)
1
Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences (CAS)
, Lanzhou 730000, People's Republic of China
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Pengfei Zhai
;
Pengfei Zhai
(Data curation, Investigation)
1
Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences (CAS)
, Lanzhou 730000, People's Republic of China
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Zongzhen Li
;
Zongzhen Li
(Funding acquisition)
1
Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences (CAS)
, Lanzhou 730000, People's Republic of China
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Li Liu;
Li Liu
(Investigation)
1
Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences (CAS)
, Lanzhou 730000, People's Republic of China
2
University of Chinese Academy of Sciences
, Beijing 100049, People's Republic of China
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Note: This paper is part of the APL Special Collection on Phononics of Graphene, Layered Materials, and Heterostructures.
Appl. Phys. Lett. 121, 083102 (2022)
Article history
Received:
May 05 2022
Accepted:
August 07 2022
Citation
Shengxia Zhang, Lijun Xu, Peipei Hu, Khan Maaz, Jian Zeng, Pengfei Zhai, Zongzhen Li, Li Liu, Jie Liu; Excitonic performance and ultrafast dynamics in defective WSe2. Appl. Phys. Lett. 22 August 2022; 121 (8): 083102. https://doi.org/10.1063/5.0098100
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