In this work, β-Ga2O3 fin field-effect transistors (FinFETs) with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga2O3 substrates are demonstrated. β-Ga2O3 fin channels with smooth sidewalls are produced by the plasma-free metal-assisted chemical etching (MacEtch) method. A specific on-resistance (Ron,sp) of 6.5 mΩ·cm2 and a 370 V breakdown voltage are achieved. In addition, these MacEtch-formed FinFETs demonstrate DC transfer characteristics with near zero (9.7 mV) hysteresis. The effect of channel orientation on threshold voltage, subthreshold swing, hysteresis, and breakdown voltages is also characterized. The FinFET with channel perpendicular to the [102] direction is found to exhibit the lowest subthreshold swing and hysteresis.
References
1.
M.
Orita
, H.
Ohta
, M.
Hirano
, and H.
Hosono
, Appl. Phys. Lett.
77
, 4166
(2000
).2.
H.
He
, R.
Orlando
, M. A.
Blanco
, R.
Pandey
, E.
Amzallag
, I.
Baraille
, and M.
Rérat
, Phys. Rev. B
74
, 195123
(2006
).3.
N.
Ma
, N.
Tanen
, A.
Verma
, Z.
Guo
, T.
Luo
, H.
(Grace) Xing
, and D.
Jena
, Appl. Phys. Lett.
109
, 212101
(2016
).4.
S.
Rafique
, L.
Han
, M. J.
Tadjer
, J. A.
Freitas
, N. A.
Mahadik
, and H.
Zhao
, Appl. Phys. Lett.
108
, 182105
(2016
).5.
M. J.
Tadjer
, T. J.
Anderson
, T. I.
Feygelson
, K. D.
Hobart
, J. K.
Hite
, A. D.
Koehler
, V. D.
Wheeler
, B. B.
Pate
, C. R.
Eddy
, and F. J.
Kub
, Phys. Status Solidi A
213
, 893
(2016
).6.
B. J.
Baliga
, “Power semiconductor device figure of merit for high-frequency applications,” IEEE Electron Device Letters
10
(10), 455
–457
(1989
); available at https://ieeexplore.ieee.org/abstract/document/43098.7.
K. D.
Leedy
, K. D.
Chabak
, V.
Vasilyev
, D. C.
Look
, J. J.
Boeckl
, J. L.
Brown
, S. E.
Tetlak
, A. J.
Green
, N. A.
Moser
, A.
Crespo
, D. B.
Thomson
, R. C.
Fitch
, J. P.
Mccandless
, and G. H.
Jessen
, Appl. Phys. Lett
111
, 12103
(2017
).8.
Q. T.
Thieu
, D.
Wakimoto
, and Y.
Koishikawa
, Appl. Phys. Express
8
, 15503
(2015
).9.
Z.
Xia
, C.
Joishi
, S.
Krishnamoorthy
, S.
Bajaj
, Y.
Zhang
, M.
Brenner
, S.
Lodha
, and S.
Rajan
, IEEE Electron Device Lett.
39
, 568
(2018
).10.
M.
Si
, L.
Yang
, H.
Zhou
, and P. D.
Ye
, ACS Omega
2
, 7136
(2017
).11.
K. D.
Chabak
, J. P.
McCandless
, N. A.
Moser
, A. J.
Green
, K.
Mahalingam
, A.
Crespo
, N.
Hendricks
, B. M.
Howe
, S. E.
Tetlak
, K.
Leedy
, R. C.
Fitch
, D.
Wakimoto
, K.
Sasaki
, A.
Kuramata
, and G. H.
Jessen
, IEEE Electron Device Lett.
39
, 67
(2018
).12.
J.
Noh
, M.
Si
, H.
Zhou
, M. J.
Tadjer
, and P. D.
Ye
, in 76th Device Research Conference
(IEEE
, 2018
), pp. 1
–2
.13.
C.
Joishi
, Z.
Xia
, J.
Mcglone
, Y.
Zhang
, A. R.
Arehart
, S.
Ringel
, S.
Lodha
, and S.
Rajan
, Appl. Phys. Lett.
113
, 123501
(2018
).14.
Z.
Hu
, K.
Nomoto
, W.
Li
, N.
Tanen
, K.
Sasaki
, A.
Kuramata
, T.
Nakamura
, D.
Jena
, and H. G.
Xing
, IEEE Electron Device Lett.
39
, 869
(2018
).15.
M. H.
Wong
, H.
Murakami
, Y.
Kumagai
, and M.
Higashiwaki
, “Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs,” Appl. Phys. Lett.
118
(1), 012102
(2021
).16.
M. H.
Wong
, K.
Goto
, H.
Murakami
, Y.
Kumagai
, and M.
Higashiwaki
, IEEE Electron Device Lett.
40
, 431
(2019
).17.
K. D.
Chabak
, N.
Moser
, A. J.
Green
, D. E.
Walker
, S. E.
Tetlak
, E.
Heller
, A.
Crespo
, R.
Fitch
, J. P.
McCandless
, K.
Leedy
, M.
Baldini
, G.
Wagner
, Z.
Galazka
, X.
Li
, and G.
Jessen
, Appl. Phys. Lett.
109
, 213501
(2016
).18.
W.
Li
, K.
Nomoto
, Z.
Hu
, T.
Nakamura
, D.
Jena
, and H. G.
Xing
, in Technical Digest-Int. Electron Devices Meeting (IEDM)
(IEEE, Piscataway, NJ, 2019
), p. 270
.19.
L.
Nela
, J.
Ma
, C.
Erine
, P.
Xiang
, T. H.
Shen
, V.
Tileli
, T.
Wang
, K.
Cheng
, and E.
Matioli
, Nat. Electron.
4
, 284
(2021
).20.
Z.
Hu
, K.
Nomoto
, W.
Li
, Z.
Zhang
, N.
Tanen
, Q. T.
Thieu
, K.
Sasaki
, A.
Kuramata
, T.
Nakamura
, D.
Jena
, and H. G.
Xing
, Appl. Phys. Lett.
113
, 122103
(2018
).21.
X.
Li
and P. W.
Bohn
, Appl. Phys. Lett.
77
, 2572
(2000
).22.
Y.
Song
, P. K.
Mohseni
, S. H.
Kim
, J. C.
Shin
, T.
Ishihara
, I.
Adesida
, and X.
Li
, IEEE Electron Device Lett.
37
, 970
(2016
).23.
C. Y.
Chan
, S.
Namiki
, J. K.
Hite
, M. A.
Mastro
, S. B.
Qadri
, and X.
Li
, J. Vac. Sci. Technol. A
39
, 053212
(2021
).24.
L.
Kong
, Y.
Song
, J. D.
Kim
, L.
Yu
, D.
Wasserman
, W. K.
Chim
, S. Y.
Chiam
, and X.
Li
, ACS Nano
11
, 10193
(2017
).25.
X.
Li
, Curr. Opin. Solid State Mater. Sci.
16
, 71
(2012
).26.
H.-C.
Huang
, M.
Kim
, X.
Zhan
, K.
Chabak
, J. D.
Kim
, A.
Kvit
, D.
Liu
, Z.
Ma
, J.-M.
Zuo
, and X.
Li
, “High aspect ratio β-Ga2O3 fin arrays with low-interface charge density by inverse metal-assisted chemical etching,” ACS Nano
13
(8
), 8784
–8792
(2019
).27.
M.
Kim
, H.-C.
Huang
, J. D.
Kim
, K. D.
Chabak
, A.
Raj
, K.
Kalapala
, W.
Zhou
, and X.
Li
, Appl. Phys. Lett.
113
, 222104
(2018
).28.
Z.
Feng
, A. F. M.
Anhar Uddin Bhuiyan
, M. R.
Karim
, and H.
Zhao
, Appl. Phys. Lett.
114
, 250601
(2019
).29.
Z.
Feng
, A.
Bhuiyan
, Z.
Xia
, W.
Moore
, Z.
Chen
, J. F.
McGlone
, D. R.
Daughton
, A. R.
Arehart
, S. A.
Ringel
, S.
Rajan
, and H.
Zhao
, Phys. Status Solidi RRL
14
, 2000145
(2020
).30.
H.
Zhou
, S.
Alghamdi
, M.
Si
, G.
Qiu
, and P. D.
Ye
, IEEE Electron Device Lett.
37
, 1411
(2016
).31.
Z.
Huang
, N.
Geyer
, P.
Werner
, J.
deBoor
, and U.
Gösele
, Adv. Mater.
23
, 285
(2011
).32.
I. S.
Chun
, E.
Chow
, and X.
Li
, “Nanoscale three dimensional pattern formation in light emitting porous silicon,” Appl. Phys. Lett.
92
, 191113
(2008
).33.
S. H.
Kim
, P. K.
Mohseni
, Y.
Song
, T.
Ishihara
, and X.
Li
, Nano Lett.
15
, 641
(2015
).34.
H. C.
Huang
, Z.
Ren
, C.
Chan
, and X.
Li
, J. Mater. Res.
36
, 4756
(2021
).35.
36.
Y.
Park
, J.
Ma
, G.
Yoo
, and J.
Heo
, “Interface trap-induced temperature dependent hysteresis and mobility in β-Ga2O3 field-effect transistors,” Nanomaterials
11
(2
), 494
(2021
).37.
Y.
Lv
, X.
Zhou
, S.
Long
, Y.
Wang
, X.
Song
, X.
Zhou
, G.
Xu
, S.
Liang
, Z.
Feng
, S.
Cai
, X.
Fu
, A.
Pu
, and M.
Liu
, Phys. Status Solidi RRL
14
, 1900586
(2020
).38.
W.
Hao
, Q.
He
, K.
Zhou
, G.
Xu
, W.
Xiong
, X.
Zhou
, G.
Jian
, C.
Chen
, X.
Zhao
, and S.
Long
, Appl. Phys. Lett.
118
, 043501
(2021
).39.
M.
Higashiwaki
, K.
Sasaki
, A.
Kuramata
, T.
Masui
, and S.
Yamakoshi
, Appl. Phys. Lett.
100
, 013504
(2012
).40.
E. D.
Kurniawan
, H.
Yang
, C. C.
Lin
, and Y. C.
Wu
, “Effect of fin shape of tapered FinFETs on the device performance in 5-nm node CMOS technology,” Microelectronics Reliability
83
, 254
–259
(2018
).41.
Y.
Zhang
, A.
Neal
, Z.
Xia
, C.
Joishi
, J. M.
Johnson
, Y.
Zheng
, S.
Bajaj
, M.
Brenner
, D.
Dorsey
, K.
Chabak
, G.
Jessen
, J.
Hwang
, S.
Mou
, J. P.
Heremans
, and S.
Rajan
, Appl. Phys. Lett.
112
, 173502
(2018
).42.
C.
Joishi
, Y.
Zhang
, Z.
Xia
, W.
Sun
, A. R.
Arehart
, S.
Ringel
, S.
Lodha
, and S.
Rajan
, IEEE Electron Device Lett.
40
, 1241
(2019
).43.
K.
Zeng
, A.
Vaidya
, and U.
Singisetti
, Appl. Phys. Express
12
, 081003
(2019
).44.
H.
Gong
, F.
Zhou
, W.
Xu
, X.
Yu
, Y.
Xu
, Y.
Yang
, F. F.
Ren
, S.
Gu
, Y.
Zheng
, R.
Zhang
, H.
Lu
, and J.
Ye
, IEEE Trans. Power Electron.
36
, 12213
(2021
).45.
N.
Allen
, M.
Xiao
, X.
Yan
, K.
Sasaki
, M. J.
Tadjer
, J.
Ma
, R.
Zhang
, H.
Wang
, and Y.
Zhang
, IEEE Electron Device Lett.
40
, 1399
(2019
).46.
N. K.
Kalarickal
, Z.
Xia
, J. F.
McGlone
, Y.
Liu
, W.
Moore
, A. R.
Arehart
, S. A.
Ringel
, and S.
Rajan
, J. Appl. Phys.
127
, 215706
(2020
).47.
J. K.
Mun
, K.
Cho
, W.
Chang
, H.-W.
Jung
, and J.
Do
, ECS J. Solid State Sci. Technol.
8
, Q3079
(2019
).48.
Hu.
Z.
, K.
Nomoto
, W.
Li
, L. J.
Zhang
, J. H.
Shin
, N.
Tanen
, and H. G.
Xing
, “Vertical fin Ga2O3 power field-effect transistors with on/off ratio> 10 9,” in 2017 75th Annual Device Research Conference (DRC)
(IEEE
, Piscataway, NJ
, 2017
) pp. 1
–2
.49.
Y.
Lü
, X.
Song
, Z.
He
, Y.
Wang
, X.
Tan
, S.
Liang
, C.
Wei
, X.
Zhou
, and Z.
Feng
, J. Semicond.
40
, 012803
(2019
).50.
H.
Zhou
, M.
Si
, S.
Alghamdi
, G.
Qiu
, L.
Yang
, and P. D.
Ye
, IEEE Electron Device Lett.
38
, 103
(2017
).51.
M. H.
Wong
, K.
Sasaki
, A.
Kuramata
, S.
Yamakoshi
, and M.
Higashiwaki
, IEEE Electron Device Lett.
37
, 212
(2016
).© 2022 Author(s). Published under an exclusive license by AIP Publishing.
2022
Author(s)
You do not currently have access to this content.
