Vertical heterojunction NiO/β n-Ga2O/n+ Ga2O3 rectifiers employing NiO layer extension beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 kV with a power figure-of-merits, VB2/RON of 2 GW·cm−2, where RON is the on-state resistance (11.3 mΩ cm2). Conventional rectifiers fabricated on the same wafers without NiO showed VB values of 840 V and a power figure-of-merit of 0.11 GW cm−2. Optimization of the design of the two-layer NiO doping and thickness and also the extension beyond the rectifying contact by TCAD showed that the peak electric field at the edge of the rectifying contact could be significantly reduced. The leakage current density before breakdown was 144 mA/cm2, the forward current density was 0.8 kA/cm2 at 12 V, and the turn-on voltage was in the range of 2.2–2.4 V compared to 0.8 V without NiO. Transmission electron microscopy showed sharp interfaces between NiO and epitaxial Ga2O3 and a small amount of disorder from the sputtering process.
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25 July 2022
Research Article|
July 26 2022
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers
Jian-Sian Li;
Jian-Sian Li
(Conceptualization, Data curation, Formal analysis, Writing – original draft)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32606, USA
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Chao-Ching Chiang;
Chao-Ching Chiang
(Conceptualization, Data curation, Writing – original draft)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32606, USA
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Xinyi Xia;
Xinyi Xia
(Data curation, Formal analysis, Writing – original draft)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32606, USA
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Timothy Jinsoo Yoo
;
Timothy Jinsoo Yoo
(Data curation, Formal analysis, Writing – original draft)
2
Department of Materials Science and Engineering, University of Florida
, Gainesville, Florida 32606, USA
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Fan Ren
;
Fan Ren
(Conceptualization, Data curation, Writing – original draft, Writing – review & editing)
1
Department of Chemical Engineering, University of Florida
, Gainesville, Florida 32606, USA
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Honggyu Kim
;
Honggyu Kim
(Data curation, Formal analysis, Writing – original draft)
2
Department of Materials Science and Engineering, University of Florida
, Gainesville, Florida 32606, USA
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S. J. Pearton
S. J. Pearton
a)
(Conceptualization, Data curation, Validation, Writing – original draft, Writing – review & editing)
2
Department of Materials Science and Engineering, University of Florida
, Gainesville, Florida 32606, USA
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 121, 042105 (2022)
Article history
Received:
April 29 2022
Accepted:
July 12 2022
Citation
Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Timothy Jinsoo Yoo, Fan Ren, Honggyu Kim, S. J. Pearton; Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers. Appl. Phys. Lett. 25 July 2022; 121 (4): 042105. https://doi.org/10.1063/5.0097564
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