The magneto-transport and angle-resolved photoelectron spectroscopy (ARPES) of the S-doped Bi1.5Sb0.5Te1.3Se1.7 system have been investigated. Both the positive magnetoresistance (pMR) and negative magnetoresistance (nMR) under a perpendicular magnetic field as well as a changeover from weak antilocalization (WAL) to weak localization (WL) are observed. The interplay between pMR and nMR is elucidated in terms of the dephasing and spin–orbit scattering time scales. The topological surface state bands have been explored using ARPES.
References
1.
A. A.
Taskin
, Z.
Ren
, S.
Sasaki
, K.
Segawa
, and Y.
Ando
, “Observation of Dirac holes and electrons in a topological insulator
,” Phys. Rev. Lett.
107
, 016801
(2011
).2.
H.
Li
, H. W.
Wang
, Y.
Li
, H.
Zhang
, S.
Zhang
, X. C.
Pan
, B.
Jia
, F.
Song
, and J.
Wang
, “Quantitative analysis of weak antilocalization effect of topological surface states in topological insulator BiSbTeSe2
,” Nano Lett.
19
, 2450
(2019
).3.
H.
Lohani
, P.
Mishra
, A.
Banerjee
, K.
Majhi
, R.
Ganesan
, U.
Manju
, D.
Topwal
, P. S.
Anil Kumar
, and B. R.
Sekhar
, “Band structure of topological insulator BiSbTe1.25Se1.75
,” Sci. Rep.
7
, 4567
(2017
).4.
M.
Singh
, S.
Kumar
, M.
Alam
, V. K.
Gangwar
, L.
Ghosh
, D.
Pal
, R.
Singh
, P.
Shahi
, P.
Chaudhary
, K.
Shimada
, and S.
Chatterjee
, “Evidence of surface and bulk magnetic ordering in Fe and Mn doped Bi2(SeS)3 topological insulator
,” Appl. Phys. Lett.
118
, 132409
(2021
).5.
Y.
Xu
, I.
Miotkowski
, C.
Liu
, J.
Tian
, H.
Nam
, N.
Alidoust
, J.
Hu
, C. K.
Shih
, M. Z.
Hasan
, and Y. P.
Chen
, “Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
,” Nat. Phys.
10
, 956
(2014
).6.
T.
Arakane
, T.
Sato
, S.
Souma
, K.
Kosaka
, K.
Nakayama
, M.
Komatsu
, T.
Takahashi
, Z.
Ren
, K.
Segawa
, and Y.
Ando
, “Tunable Dirac cone in the topological insulator Bi2−xSbxTe3−ySey
,” Nat. Commun.
3
, 636
(2012
).7.
K.
Segawa
, Z.
Ren
, S.
Sasaki
, T.
Tsuda
, S.
Kuwabata
, and Y.
Ando
, “Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid
,” Phys. Rev. B
86
, 075306
(2012
).8.
Z.
Ren
, A. A.
Taskin
, S.
Sasaki
, K.
Segawa
, and Y.
Ando
, “Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se
,” Phys. Rev. B
82
, 241306
(2010
).9.
B.
Xia
, P.
Ren
, A.
Sulaev
, P.
Liu
, S. Q.
Shen
, and L.
Wang
, “Indications of surface-dominated transport in single crystalline nanoflake devices of topological insulator Bi1.5Sb0.5Te 1.8Se1.2
,” Phys. Rev. B
87
, 085442
(2013
).10.
Y.
Pan
, D.
Wu
, J. R.
Angevaare
, H.
Luigjes
, E.
Frantzeskakis
, N.
de Jong
, E.
van Heumen
, T. V.
Bay
, B.
Zwartsenberg
, Y. K.
Huang
, M.
Snelder
, A.
Brinkman
, M. S.
Golden
, and A.
de Visser
, “Low carrier concentration crystals of the topological insulator Bi2−xSbxTe3−ySey: A magnetotransport study
,” New J. Phys.
16
, 123035
(2014
).11.
M.
Bagchi
, L.
Pitz-Paal
, C. P.
Grams
, O.
Breunig
, N.
Borgwardt
, Z.
Wang
, Y.
Ando
, M.
Grüninger
, and J.
Hemberger
, “Large positive magnetoconductivity at microwave frequencies in the compensated topological insulator BiSbTeSe2
,” Phys. Rev. B
99
, 161121
(2019
).12.
Z.
Ren
, A. A.
Taskin
, S.
Sasaki
, K.
Segawa
, and Y.
Ando
, “Optimizing Bi2−xSbxTe3−ySey solid solutions to approach the intrinsic topological insulator regime
,” Phys. Rev. B
84
, 165311
(2011
).13.
M.
Lang
, L.
He
, X.
Kou
, P.
Upadhyaya
, Y.
Fan
, H.
Chu
, Y.
Jiang
, J. H.
Bardarson
, W.
Jiang
, E. S.
Choi
, Y.
Wang
, N.
Yeh
, J.
Moore
, and K. L.
Wang
, “Competing weak localization and weak antilocalization in ultrathin topological insulators
,” Nano Lett.
13
, 48
(2013
).14.
R.
Singh
, V. K.
Gangwar
, D. D.
Daga
, A.
Singh
, A. K.
Ghosh
, M.
Kumar
, A.
Lakhani
, R.
Singh
, and S.
Chatterjee
, “Unusual negative magnetoresistance in Bi2Se3-ySy topological insulator under perpendicular magnetic Field
,” Appl. Phys. Lett.
112
, 102401
(2018
).15.
X.
Xin
and M. C.
Yeh
, “The Kondo effect in three-dimensional topological insulators
,” J. Phys.: Condens. Matter
25
, 286001
(2013
).16.
L. R.
Testardi
, J. N.
Bierly
, and F. J.
Donahoe
, “Transport properties of p-type Bi2Te3Sb2Te3 alloys in the temperature range 80–370°K
,” J. Phys. Chem. Solids
23
, 1209
(1962
).17.
B.
Liu
, W.
Xie
, H.
Li
, Y.
Wang
, D.
Cai
, D.
Wang
, L.
Wang
, Y.
Liu
, Q.
Li
, and T.
Wang
, “Surrounding sensitive electronic properties of Bi2Te3 nanoplates - Potential sensing applications of topological insulators
,” Sci. Rep.
4
, 4639
(2014
).18.
W.
Ko
, I.
Jeon
, H. W.
Kim
, H.
Kwon
, S. J.
Kahng
, J.
Park
, J. S.
Kim
, S. W.
Hwang
, and H.
Suh
, “Atomic and electronic structure of an alloyed topological insulator, Bi1.5Sb0.5Te1.7Se1.3
,” Sci. Rep.
3
, 2656
(2013
).19.
A.
Singh
, R.
Singh
, T.
Patel
, G. S.
Okram
, A.
Lakhani
, V.
Ganeshan
, and A. K.
Ghosh
, “Tuning of carrier type, enhancement of linear magnetoresistance and inducing ferromagnetism at room temperature with Cu doping in Bi2Te3 topological insulators
,” Mater. Res. Bull.
98
, 1
(2018
).20.
Y. J.
Hao
, P.
Liu
, Y.
Feng
, X. M.
Ma
, E. F.
Schwier
, M.
Arita
, S.
Kumar
, C.
Hu
, R.
Lu
, M.
Zeng
, Y.
Wang
, Z.
Hao
, H. Y.
Sun
, K.
Zhang
, J.
Mei
, N.
Ni
, L.
Wu
, K.
Shimada
, C.
Chen
, Q.
Liu
, and C.
Liu
, “Gapless surface Dirac cone in antiferromagnetic topological insulator MnBi2Te4
,” Phys. Rev. X
9
, 041038
(2019
).21.
E. P.
Amaladass
, T. R.
Devidas
, S.
Sharma
, C. S.
Sundar
, A.
Mani
, and A.
Bharathi
, “Magneto-transport behaviour of Bi2Se3−XTeX: Role of disorder
,” J. Phys.: Condens. Matter
28
, 75003
(2016
).22.
J.
Chen
, H.
Li
, B.
Ding
, Z.
Hou
, E.
Liu
, X.
Xi
, G.
Wu
, and W.
Wang
, “Tunable positive magnetoresistance and crossover from weak antilocalization to weak localization transition in half-Heusler compounds RPtBi (R = lanthanide)
,” Appl. Phys. Lett.
116
, 101902
(2020
).23.
M.
Lee
, S. W.
Cho
, Y.
Yi
, and S.
Lee
, “Composition-dependent topological-insulator properties of epitaxial (Bi1−xSbx)2(Te1−ySey)3 thin films
,” J. Alloys Compd.
800
, 81
(2019
).24.
J. J.
Cha
, D.
Kong
, S. S.
Hong
, J. G.
Analytis
, K.
Lai
, and Y.
Cui
, “Weak antilocalization in Bi2(SexTe1−x)3 nanoribbons and nanoplates
,” Nano Lett.
12
, 1107
(2012
).25.
V. K.
Maurya
, M. M.
Patidar
, A.
Dhaka
, R.
Rawat
, V.
Ganesan
, and R. S.
Dhaka
, “Magnetotransport and berry phase in magnetically doped Bi0.97−xSb0.03 single crystals
,” Phys. Rev. B
102
, 144412
(2020
).26.
K.
Shrestha
, D.
Graf
, V.
Marinova
, B.
Lorenz
, and C. W.
Chu
, “Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0
,” J. Appl. Phys.
122
, 145901
(2017
).27.
K.
Banerjee
, J.
Son
, P.
Deorani
, P.
Ren
, L.
Wang
, and H.
Yang
, “Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2
,” Phys. Rev. B
90
, 235427
(2014
).28.
I.
Garate
and L.
Glazman
, “Weak localization and antilocalization in topological insulator thin films with coherent bulk-surface coupling
,” Phys. Rev. B
86
, 039909
(2012
).29.
H.
Zhang
, C. X.
Liu
, X. L.
Qi
, X.
Dai
, Z.
Fang
, and S. C.
Zhang
, “Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
,” Nat. Phys.
5
, 438
(2009
).30.
W.
Ning
, H.
Du
, F.
Kong
, J.
Yang
, Y.
Han
, M.
Tian
, and Y.
Zhang
, “One-dimensional weak antilocalization in single-crystal Bi2Te3 nanowires
,” Sci. Rep.
3
, 1564
(2013
).31.
N.
Bansal
, Y. S.
Kim
, M.
Brahlek
, E.
Edrey
, and S.
Oh
, “Thickness-independent transport channels in topological insulator Bi2Se3 thin films
,” Phys. Rev. Lett.
109
, 116804
(2012
).32.
B. A.
Assaf
, T.
Cardinal
, P.
Wei
, F.
Katmis
, J. S.
Moodera
, and D.
Heiman
, “Linear magnetoresistance in topological insulator thin films: quantum phase coherence effects at high temperatures
,” Appl. Phys. Lett.
102
, 012102
(2013
).33.
D.
Goldhaber-Gordon
, J.
Göres
, M. A.
Kastner
, H.
Shtrikman
, D.
Mahalu
, and U.
Meirav
, “From the Kondo regime to the mixed-valence regime in a single-electron transistor
,” Phys. Rev. Lett.
81
, 5225
(1998
).34.
R. R.
Urkude
, A.
Sagdeo
, R.
Rawat
, R. J.
Choudhary
, K.
Asokan
, S.
Ojha
, and U. A.
Palikundwar
, “Observation of Kondo behavior in the single crystals of mn-doped Bi2Se3 topological insulator
,” AIP Adv.
8
, 045315
(2018
).35.
T. A.
Costits
, A. C.
Hewsont
, and V.
Zlatie
, “Transport coefficients of the anderson model via the numerical renormalization group
,” J. Phys.: Condens. Matter
6
, 2519
(1994
).36.
X.
Xin
and D.
Zhou
, “Kondo effect in a topological insulator quantum dot
,” Phys. Rev. B
91
, 165120
(2015
).37.
Y. J.
Zhang
, W.
Shi
, J. T.
Ye
, R.
Suzuki
, and Y.
Iwasa
, “Robustly protected carrier spin relaxation in electrostatically doped transition-metal dichalcogenides
,” Phys. Rev. B
95
, 205302
(2017
).38.
H.
Liang
, L.
Cheng
, L.
Wei
, Z.
Luo
, G.
Yu
, C.
Zeng
, and Z.
Zhang
, “Nonmonotonically tunable rashba spin-orbit coupling by multiple-band filling control in SrTiO3-based interfacial d-electron gases
,” Phys. Rev. B
92
, 7
(2015
).39.
T.
Koga
, J.
Nitta
, T.
Akazaki
, and H.
Takayanagi
, “Rashba spin-orbit coupling probed by the weak antilocalization analysis in InAlAs/In GaAs/InAlAs quantum wells as a function of quantum well asymmetry
,” Phys. Rev. Lett.
89
, 046801
(2002
).40.
W. E.
Liu
, E. M.
Hankiewicz
, and D.
Culcer
, “Weak localization and antilocalization in topological materials with impurity spin-orbit interactions
,” Mater. (Basel).
10
, 807
(2017
).41.
H.
Liu
, L.
Bao
, Z.
Zhou
, B.
Che
, R.
Zhang
, C.
Bian
, R.
Ma
, L.
Wu
, H.
Yang
, J.
Li
, C.
Gu
, C. M.
Shen
, S.
Du
, and H. J.
Gao
, “Quasi-2D transport and weak antilocalization effect in few-layered VSe2
,” Nano Lett.
19
, 4551
(2019
).42.
H.
He
, B.
Li
, H.
Liu
, X.
Guo
, Z.
Wang
, M.
Xie
, and J.
Wang
, “High-field linear magneto-resistance in topological insulator Bi2Se3 thin films
,” Appl. Phys. Lett.
100
, 032105
(2012
).43.
H.
Zhang
, H.
Li
, H.
Wang
, G.
Cheng
, H.
He
, and J.
Wang
, “Linear positive and negative magnetoresistance in topological insulator Bi2Se3 flakes
,” Appl. Phys. Lett.
113
, 113503
(2018
).44.
B.
Bhattacharyya
, B.
Singh
, R. P.
Aloysius
, R.
Yadav
, C.
Su
, H.
Lin
, S.
Auluck
, A.
Gupta
, T. D.
Senguttuvan
, and S.
Husale
, “Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires
,” Sci. Rep.
9
, 7836
(2019
).45.
H. B.
Zhang
, H. L.
Yu
, D. H.
Bao
, S. W.
Li
, C. X.
Wang
, and G. W.
Yang
, “Weak localization bulk state in a topological insulator Bi2Te3 film
,” Phys. Rev. B
86
, 075102
(2012
).46.
H.
Wang
, H.
Liu
, C. Z.
Chang
, H.
Zuo
, Y.
Zhao
, Y.
Sun
, Z.
Xia
, K.
He
, X.
Ma
, X. C.
Xie
, Q. K.
Xue
, and J.
Wang
, “Crossover between weak antilocalization and weak localization of bulk states in ultrathin Bi2Se3 films
,” Sci. Rep.
4
, 5817
(2014
).47.
R.
Jiang
, L. L.
Wang
, M.
Huang
, R. S.
Dhaka
, D. D.
Johnson
, T. A.
Lograsso
, and A.
Kaminski
, “Reversible tuning of the surface state in a pseudobinary Bi2(Te-Se)3 topological insulator
,” Phys. Rev. B
86
, 085112
(2012
).© 2022 Author(s). Published under an exclusive license by AIP Publishing.
2022
Author(s)
You do not currently have access to this content.