Hydroxyl-induced stability and mobility enhancement for field effect transistor based on In₂O₃ nanofiber

In this work, In₂O₃ nanofibers were fabricated by electrospinning, and a field effect transistor (FET) based on In₂O₃ nanofibers was integrated. A hydroxyl-assisted strategy was proposed for both stability and performance enhancement for the FET. Hydrogen peroxide (H₂O₂) was added into a precursor solution for electrospinning. It is found that the stability of the FET is improved after H₂O₂ incorporation, while the mobility is decreased. Surprisingly, after UV irradiation, the FET with both high mobility and high stability was obtained. It is assumed that under UV irradiation, H₂O₂ is decomposed into highly reactive hydroxyl radicals (•OH), which contributes to the degradation of the polymer. XPS and FT-IR analysis verify that oxygen- and carbon-related defects can be removed through the hydroxyl-assistant strategy. Furthermore, the flexible FET based on In₂O₃ nanofibers with H₂O₂ addition and UV irradiation was fabricated on the PI substrate, and the high electrical performance is further demonstrated. This strategy makes it possible to fabricate the oxide nanofiber FET with both high mobility and high stability.