In this work, we have prepared an antiferromagnetic insulated α-Fe2O3 film with a large out-of-plane magnetic component and studied the spin Hall magnetoresistance (SMR) in α-Fe2O3/Pt bilayers. Both angular-dependent magnetoresistance and field-dependent magnetoresistance have featured a sign change characteristic with varying temperature, which is ascribed to the competition between a modulated interface magnetic state and an antiferromagnetic bulk state of the α-Fe2O3 film. According to a generalized theoretical model, which takes the effective spin conductance into consideration, the spin transport can be mathematically expressed as the change of field dependent average spin operators with varying temperature. The critical temperature also depends on the α-Fe2O3 film thickness and the magnetic field, which are ascribed to the magnons transport and long-range order of non-collinear spin textures, respectively. Furthermore, we have given a phenomenological form to fit the SMR curves in the critical temperature interval, which further reveals the origin of SMR with complex magnetic structures.
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26 December 2022
Research Article|
December 29 2022
Spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt bilayers: Modulation from interface magnetic state Available to Purchase
T. Z. Zhang;
T. Z. Zhang
(Data curation, Formal analysis, Investigation, Writing – original draft)
1
School of Materials Science and Engineering, University of Science and Technology Beijing
, Beijing 100083, China
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K. K. Meng
;
K. K. Meng
a)
(Supervision, Visualization, Writing – review & editing)
1
School of Materials Science and Engineering, University of Science and Technology Beijing
, Beijing 100083, China
2
Department of Applied Physics, The University of Tokyo
, Tokyo 113-8656, Japan
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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X. Shi
;
X. Shi
(Formal analysis)
1
School of Materials Science and Engineering, University of Science and Technology Beijing
, Beijing 100083, China
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Y. B. Deng
;
Y. B. Deng
(Formal analysis)
1
School of Materials Science and Engineering, University of Science and Technology Beijing
, Beijing 100083, China
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L. B. Zhu
;
L. B. Zhu
(Formal analysis)
1
School of Materials Science and Engineering, University of Science and Technology Beijing
, Beijing 100083, China
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X. G. Xu
;
X. G. Xu
a)
(Funding acquisition, Supervision, Visualization)
1
School of Materials Science and Engineering, University of Science and Technology Beijing
, Beijing 100083, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Y. Jiang
Y. Jiang
a)
(Funding acquisition, Supervision, Validation, Visualization)
1
School of Materials Science and Engineering, University of Science and Technology Beijing
, Beijing 100083, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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T. Z. Zhang
1
K. K. Meng
1,2,a)
Y. B. Deng
1
L. B. Zhu
1
X. G. Xu
1,a)
Y. Jiang
1,a)
1
School of Materials Science and Engineering, University of Science and Technology Beijing
, Beijing 100083, China
2
Department of Applied Physics, The University of Tokyo
, Tokyo 113-8656, Japan
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
Appl. Phys. Lett. 121, 262404 (2022)
Article history
Received:
August 10 2022
Accepted:
December 16 2022
Citation
T. Z. Zhang, K. K. Meng, X. Shi, Y. B. Deng, L. B. Zhu, X. G. Xu, Y. Jiang; Spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt bilayers: Modulation from interface magnetic state. Appl. Phys. Lett. 26 December 2022; 121 (26): 262404. https://doi.org/10.1063/5.0119960
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