We have experimentally demonstrated a phase change control of Hall effects in ferromagnetic MnBi thin films at room temperature. Two distinct ferromagnetic phases, i.e., a low-temperature phase and a quenched high-temperature phase, were obtained by slow-cooling or quenching the sputtered MnBi films. The measurement of Hall effects showed that the anomalous Hall resistivity has different coercivity and remanence between the two phases. By optimizing the Mn/Bi ratio, it is even possible to repeatedly switch the sign of Hall resistivity, which could be utilized as a concept of phase-change memory based on ferromagnetic transport.

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