In this work, a high-performance flexible radio frequency transistor using an ultrathin indium tin oxide film channel based on a solution-cast thin polyimide substrate has been demonstrated. The 60 nm short channel transistor shows a record high cut-off frequency of 5 GHz and a maximum oscillation frequency of 11 GHz with high uniformity among 40 devices. The radio frequency characteristics under various bending conditions have been systematically studied under a bending radius of 5 mm for 10 000 times and a bending radius of 1 mm for 1000 times, showing excellent stability with only 20% decrease in the cut-off frequency. Furthermore, a flexible frequency mixer has also been demonstrated at 2.4 GHz with decent conversion gains.
High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel
Note: This paper is part of the APL Special Collection on Metal Oxide Thin-Film Electronics.
Qianlan Hu, Shenwu Zhu, Chengru Gu, Yanqing Wu; High-stability flexible radio frequency transistor and mixer based on ultrathin indium tin oxide channel. Appl. Phys. Lett. 12 December 2022; 121 (24): 242101. https://doi.org/10.1063/5.0128781
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