The layered EuSn2As2 crystal has been proved to be an intrinsic magnetic topological insulator with Bi2Te3-type rhombohedral structure at ambient conditions and undergoes a structural phase transition under pressure. Here, we report an experimental lattice vibration study of EuSn2As2 up to 30.5 GPa by in situ Raman scattering measurements. Four Raman-active modes (2A1g + 2Eg) at ambient pressure are observed experimentally and identified by first-principles calculations. Upon compression, the Eg2 and A1g2 modes merge together at 12.45 GPa, meanwhile the frequencies, intensities, and linewidths of all Raman modes show discontinuous changes, exhibiting a structural phase transition. No Raman-active modes are observed above 21.5 GPa, indicating the new high-pressure metallic phase is completely achieved. The evolution of all observed modes under pressure is also discussed with a two-stage reconstruction mechanism proposed recently by ab initio calculations and XRD measurements. These results provide a basic information about the lattice dynamics and expand our understandings on the structural evolution in layered magnetic topological insulators under high pressure.
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14 November 2022
Research Article|
November 14 2022
Raman scattering investigation of structural phase transition in compressed EuSn2As2 Available to Purchase
Lin Zhao
;
Lin Zhao
(Data curation, Formal analysis, Investigation, Methodology, Visualization, Writing – original draft, Writing – review & editing)
1
State Key Laboratory of Superhard Materials, Jilin University
, Changchun 130012, China
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Xiaoli Ma;
Xiaoli Ma
(Formal analysis, Methodology)
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Cheng Tian
;
Cheng Tian
(Resources)
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Changjiang Yi;
Changjiang Yi
(Resources)
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Youguo Shi;
Youguo Shi
(Resources)
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
3
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
4
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
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Fang Hong;
Fang Hong
(Methodology)
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
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Xiaohui Yu;
Xiaohui Yu
(Conceptualization, Funding acquisition, Project administration, Supervision)
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
4
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
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Yonghao Han
;
Yonghao Han
a)
(Conceptualization, Funding acquisition)
1
State Key Laboratory of Superhard Materials, Jilin University
, Changchun 130012, China
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Jian-Tao Wang
Jian-Tao Wang
a)
(Conceptualization, Funding acquisition, Project administration, Software, Supervision, Validation, Writing – review & editing)
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
4
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
5
School of Physical Sciences, University of Chinese Academy of Sciences
, Beijing 100049, China
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Lin Zhao
1
Xiaoli Ma
2
Cheng Tian
2
Changjiang Yi
2
Youguo Shi
2,3,4
Fang Hong
2
Xiaohui Yu
2,4
Yonghao Han
1,a)
Jian-Tao Wang
2,4,5,a)
1
State Key Laboratory of Superhard Materials, Jilin University
, Changchun 130012, China
2
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences
, Beijing 100190, China
3
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
, Beijing 100049, China
4
Songshan Lake Materials Laboratory
, Dongguan, Guangdong 523808, China
5
School of Physical Sciences, University of Chinese Academy of Sciences
, Beijing 100049, China
Appl. Phys. Lett. 121, 202201 (2022)
Article history
Received:
September 01 2022
Accepted:
October 23 2022
Citation
Lin Zhao, Xiaoli Ma, Cheng Tian, Changjiang Yi, Youguo Shi, Fang Hong, Xiaohui Yu, Yonghao Han, Jian-Tao Wang; Raman scattering investigation of structural phase transition in compressed EuSn2As2. Appl. Phys. Lett. 14 November 2022; 121 (20): 202201. https://doi.org/10.1063/5.0123813
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