This paper presents an antenna-coupled non-linear vanadium dioxide (VO2) microbolometer operating in the non-linear metal–insulator transition (MIT) region with an ultra-high responsivity of 6.55 × 104 V/W. Sputtered VO2 films used in this device exhibit 104 times change in resistivity between the dielectric and conductive states. The VO2 microbolometer is coupled to a wideband dipole antenna operating at 31–55 GHz and a coplanar waveguide for probed measurement. To enhance the sensitivity, the sensor is suspended in air by micro-electro-mechanical systems process. The large thermal coefficient of resistance of VO2 is utilized by DC biasing the device in the MIT region. Measurements for the fabricated sensor were performed, and a high responsivity was demonstrated, owing to non-linear conductivity change in the transition region. The measured sensitivity is >102 times higher than the state-of-the-art sensors. In addition, the concept of utilizing the proposed VO2 sensor in a mmWave imager was demonstrated by the radiation pattern measurement of a 4 × 4 (16 elements) antenna-coupled VO2 sensor array. The results presented in this work reveal the initial step to employ VO2's MIT for a hyper-sensitive sensor in future mmWave sensing and imaging applications.
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14 November 2022
Research Article|
November 15 2022
Antenna-coupled microbolometer based on VO2's non-linear properties across the metal–insulator transition region
Shangyi Chen
;
(Data curation, Formal analysis, Methodology, Writing – original draft, Writing – review & editing)
1
Department of Electrical and Computer Engineering, The Ohio State University
, Columbus, Ohio 43212, USA
2
Department of Mechanical and Aerospace Engineering, The Ohio State University
, Columbus, Ohio 43212, USA
a)Author to whom correspondence should be addressed: chen.6642@osu.edu
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Mark Lust
;
Mark Lust
(Data curation, Validation, Writing – original draft, Writing – review & editing)
1
Department of Electrical and Computer Engineering, The Ohio State University
, Columbus, Ohio 43212, USA
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Nima Ghalichechian
Nima Ghalichechian
(Conceptualization, Funding acquisition, Supervision, Writing – original draft, Writing – review & editing)
3
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia 30308, USA
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a)Author to whom correspondence should be addressed: chen.6642@osu.edu
b)
This research was performed while Shangyi Chen was at The Ohio State University, Columbus, Ohio 43212, USA.
Appl. Phys. Lett. 121, 201901 (2022)
Article history
Received:
September 01 2022
Accepted:
October 28 2022
Citation
Shangyi Chen, Mark Lust, Nima Ghalichechian; Antenna-coupled microbolometer based on VO2's non-linear properties across the metal–insulator transition region. Appl. Phys. Lett. 14 November 2022; 121 (20): 201901. https://doi.org/10.1063/5.0123779
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