We theoretically study the contribution of quantum effects to the exciton diffusion coefficient in atomically thin crystals. It is related to the weak localization caused by the interference of excitonic wavefunctions on the trajectories with closed loops. Due to the weak inelasticity of the exciton–phonon interaction, the effect is present even if the excitons are scattered by long-wavelength acoustic phonons. We consider exciton interaction with longitudinal acoustic phonons with linear dispersion and flexural phonons with quadratic dispersion. We identify the regimes where the weak localization effect can be particularly pronounced. We also briefly address the role of free charge carriers in the exciton quantum transport and, within the self-consistent theory of localization, the weak localization effects beyond the lowest order.
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7 November 2022
Research Article|
November 08 2022
Phonon-induced exciton weak localization in two-dimensional semiconductors
Special Collection:
Phononics of Graphene, Layered Materials, and Heterostructures
M. M. Glazov
;
M. M. Glazov
a)
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Project administration, Supervision, Validation, Writing – original draft, Writing – review & editing)
1
Ioffe Institute
, 194021 St. Petersburg, Russia
a)Author to whom correspondence should be addressed: glazov@coherent.ioffe.ru
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Z. A. Iakovlev
;
Z. A. Iakovlev
(Data curation, Formal analysis, Investigation, Writing – original draft, Writing – review & editing)
1
Ioffe Institute
, 194021 St. Petersburg, Russia
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S. Refaely-Abramson
S. Refaely-Abramson
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Project administration, Validation, Writing – original draft, Writing – review & editing)
2
Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science
, Rehovot 7610001, Israel
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a)Author to whom correspondence should be addressed: glazov@coherent.ioffe.ru
Note: This paper is part of the APL Special Collection on Phononics of Graphene, Layered Materials, and Heterostructures.
Appl. Phys. Lett. 121, 192106 (2022)
Article history
Received:
August 25 2022
Accepted:
October 23 2022
Citation
M. M. Glazov, Z. A. Iakovlev, S. Refaely-Abramson; Phonon-induced exciton weak localization in two-dimensional semiconductors. Appl. Phys. Lett. 7 November 2022; 121 (19): 192106. https://doi.org/10.1063/5.0122633
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