AlN film bulk acoustic wave (BAW) resonators operating at above 5 GHz for next generation mobile communications present some problems, such as the very thin thickness of the piezoelectric film and electrode films. These cause degradations of the power handling capability, electromechanical coupling factor, and Q value in film BAW resonators. Polarity-inverted multilayered AlN film BAW resonators can operate in high-order mode resonance. Therefore, an n-layer polarity-inverted film BAW resonator has n-times thicker piezoelectric film thickness than a standard BAW resonator with a monolayer piezoelectric film operating at same frequency. However, fabrication methods for polarity-inverted multilayered AlN films have not been established. This paper examines the effect of Si doping on AlN films on the crystal orientation, polarity direction, and electromechanical coupling factor (kt2). Furthermore, we fabricated and evaluated two- to eight-layer polarity-inverted SiAlN/AlN film high-overtone bulk acoustic wave resonators (HBARs). The polarity of the SixAl1−xN films inverted around x = 0.024–0.13. The crystal orientation and kt2 of the SixAl1-xN films were degraded with increasing Si concentration x. The eight-layer polarity-inverted SiAlN/AlN film HBAR resonated in the eighth mode. Moreover, the experimental longitudinal wave insertion loss exhibited a similar trend to the theoretical curve calculated by a Mason's equivalent circuit model considering the polarity inverted structure. The eight-layer polarity-inverted HBARs had approximately eight-times thicker piezoelectric film thickness than the monolayer AlN film HBAR. The insertion loss improved with increasing the number of polarity-inverted layers.
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3 October 2022
Research Article|
October 06 2022
High-order mode bulk acoustic wave resonators based on polarity-inverted SiAlN/AlN multilayered films for high-frequency operation
Special Collection:
Piezoelectric Thin Films for MEMS
Jun Sekimoto
;
Jun Sekimoto
(Conceptualization, Investigation, Writing – original draft)
1
The Integrated Graduate School of Medicine, Engineering, and Agricultural Sciences, University of Yamanashi
, 4-3-11 Takeda, Kofu 400-8511, Japan
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Masashi Suzuki
;
Masashi Suzuki
a)
(Conceptualization, Funding acquisition, Investigation, Writing – original draft, Writing – review & editing)
2
The Graduate Faculty of Interdisciplinary Research, University of Yamanashi
, 4-3-11 Takeda, Kofu 400-8511, Japan
a)Author to whom correspondence should be addressed: [email protected]
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Shoji Kakio
Shoji Kakio
(Conceptualization, Investigation, Writing – original draft, Writing – review & editing)
2
The Graduate Faculty of Interdisciplinary Research, University of Yamanashi
, 4-3-11 Takeda, Kofu 400-8511, Japan
Search for other works by this author on:
Jun Sekimoto
1
Masashi Suzuki
2,a)
Shoji Kakio
2
1
The Integrated Graduate School of Medicine, Engineering, and Agricultural Sciences, University of Yamanashi
, 4-3-11 Takeda, Kofu 400-8511, Japan
2
The Graduate Faculty of Interdisciplinary Research, University of Yamanashi
, 4-3-11 Takeda, Kofu 400-8511, Japan
a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the APL Special Collection on Piezoelectric Thin Films for MEMS.
Appl. Phys. Lett. 121, 141904 (2022)
Article history
Received:
June 28 2022
Accepted:
September 19 2022
Citation
Jun Sekimoto, Masashi Suzuki, Shoji Kakio; High-order mode bulk acoustic wave resonators based on polarity-inverted SiAlN/AlN multilayered films for high-frequency operation. Appl. Phys. Lett. 3 October 2022; 121 (14): 141904. https://doi.org/10.1063/5.0106428
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