Designing a flexible transparent electronic device with biological functions is of great interest for the future wearable integrated artificial intelligence equipment. Nociceptor is a vitally important receptor of sensory neuron, which is responsible for providing a warning signal by recognizing noxious stimuli to reduce potential physical injury. Here, a flexible transparent artificial nociceptor device is demonstrated to simulate the biological nociceptor functions based on the indium tin oxide (ITO) memristor, which exhibits forming-free and reproducible threshold resistive switching behaviors. This structurally simple memristor can imitate the key features of biological nociceptor, including “threshold,” “relaxation,” and “no adaptation” behaviors and sensitization phenomena of hyperalgesia and allodynia upon external stimuli. Finally, an alarm system is built to demonstrate the simplicity and feasibility of this artificial nociceptor for future neuromorphic systems. These results indicate a potential application of the ITO memristor in the future flexible invisible neuromorphic cognitive platform.
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28 February 2022
Research Article|
March 02 2022
Highly transparent flexible artificial nociceptor based on forming-free ITO memristor
Xu Han;
Xu Han
1
School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
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Yimeng Xu;
Yimeng Xu
1
School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
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Bowen Sun;
Bowen Sun
1
School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
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Ruixue Xu;
Ruixue Xu
1
School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
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Jing Xu;
Jing Xu
1
School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
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Wang Hong;
Wang Hong
1
School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
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Zhiwei Fu;
Zhiwei Fu
1
School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
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He Zhu;
He Zhu
1
School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
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Xin Sun;
Xin Sun
1
School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
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Jingjing Chang
;
Jingjing Chang
a)
2
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University
, 2 South Taibai Road, Xi'an 710071, China
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Kai Qian
Kai Qian
a)
1
School of Microelectronics, Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, Shandong University
, Jinan 250100, China
3
Shenzhen Research Institute of Shandong University
, ShenZhen 518057, China
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Appl. Phys. Lett. 120, 094103 (2022)
Article history
Received:
December 16 2021
Accepted:
February 23 2022
Citation
Xu Han, Yimeng Xu, Bowen Sun, Ruixue Xu, Jing Xu, Wang Hong, Zhiwei Fu, He Zhu, Xin Sun, Jingjing Chang, Kai Qian; Highly transparent flexible artificial nociceptor based on forming-free ITO memristor. Appl. Phys. Lett. 28 February 2022; 120 (9): 094103. https://doi.org/10.1063/5.0082538
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