Bismuth bromide (α-Bi4Br4) can demonstrate various exotic topological states, including higher-order topological insulator with hinge states and quantum spin Hall insulator with helical edge states. To date, α-Bi4Br4 nanowires can be obtained by using the exfoliation method from the bulk. However, it is still a great challenge to efficiently prepare α-Bi4Br4 nanowires suitable for potential applications, e.g., saturable absorber in ultrafast pulsed fiber lasers. Here, we report the controllable growth of α-Bi4Br4 thin films consisting of nanowires via molecular beam epitaxy technique. We show that the morphology of the α-Bi4Br4 nanowires depends on the growth temperature and BiBr3 flux. In addition, we also achieve α-Bi4Br4 nanowires on NbSe2 and gold substrates. Furthermore, we performed the saturable absorption property of α-Bi4Br4 thin films with a modulation depth of 21.58% and mode-locking at 1556.4 nm with a pulse width of 375 fs in the pulsed fiber lasers. Those results demonstrate the synthesis of quasi-1D topological material α-Bi4Br4, which is expected to be used for the fundamental research of topological physics and potential applications in optical devices.
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28 February 2022
Research Article|
March 03 2022
Controllable epitaxy of quasi-one-dimensional topological insulator α-Bi4Br4 for the application of saturable absorber
Special Collection:
One-Dimensional van der Waals Materials
Xu Zhang
;
Xu Zhang
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
2
Yangtze Delta Region Academy of Beijing Institute of Technology
, Jiaxing 314000, China
3
Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
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Xiaowei Xing
;
Xiaowei Xing
4
State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications
, Beijing 100876, China
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Ji Li;
Ji Li
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
3
Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
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Xianglin Peng;
Xianglin Peng
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
3
Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
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Lu Qiao;
Lu Qiao
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
3
Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
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Yuxiang Liu;
Yuxiang Liu
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
2
Yangtze Delta Region Academy of Beijing Institute of Technology
, Jiaxing 314000, China
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Xiaolu Xiong;
Xiaolu Xiong
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
3
Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
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Junfeng Han
;
Junfeng Han
a)
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
2
Yangtze Delta Region Academy of Beijing Institute of Technology
, Jiaxing 314000, China
3
Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Wenjun Liu
;
Wenjun Liu
a)
4
State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications
, Beijing 100876, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Wende Xiao;
Wende Xiao
a)
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
3
Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
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Yugui Yao
Yugui Yao
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
2
Yangtze Delta Region Academy of Beijing Institute of Technology
, Jiaxing 314000, China
3
Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
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Xu Zhang
1,2,3
Xiaowei Xing
4
Ji Li
1,3
Xianglin Peng
1,3
Lu Qiao
1,3
Yuxiang Liu
1,2
Xiaolu Xiong
1,3
Junfeng Han
1,2,3,a)
Wenjun Liu
4,a)
Wende Xiao
1,3,a)
Yugui Yao
1,2,3
1
Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
2
Yangtze Delta Region Academy of Beijing Institute of Technology
, Jiaxing 314000, China
3
Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology
, Beijing 100081, China
4
State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications
, Beijing 100876, China
a)Authors to whom correspondence should be addressed: [email protected]; [email protected]; and [email protected]
Note: This paper is part of the APL Special Collection on One-Dimensional van der Waals Materials.
Appl. Phys. Lett. 120, 093103 (2022)
Article history
Received:
December 30 2021
Accepted:
February 17 2022
Citation
Xu Zhang, Xiaowei Xing, Ji Li, Xianglin Peng, Lu Qiao, Yuxiang Liu, Xiaolu Xiong, Junfeng Han, Wenjun Liu, Wende Xiao, Yugui Yao; Controllable epitaxy of quasi-one-dimensional topological insulator α-Bi4Br4 for the application of saturable absorber. Appl. Phys. Lett. 28 February 2022; 120 (9): 093103. https://doi.org/10.1063/5.0083807
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