The work function (WF) of a material governs the back and forth movement of the charge carriers across the hetero-interface of two materials. Therefore, for optimum device performance, precise knowledge of the WF is prerequisite while employing any new material in electronic devices. In this work, using metal oxide semiconductor capacitors, we experimentally determine the WF of layered van der Waals topological semimetals (TSMs) 1T′-MoTe2, 1T-PtSe2, and Td-WTe2 as 4.87, 5.05, and 4.82 eV, respectively. The experimentally obtained results are corroborated with density functional theory calculations. Furthermore, by analyzing the vertical current transport across the metal oxide semiconductor stack using Fowler–Nordheim tunneling formalism, the barrier height between the TSMs and the gate insulator (SiO2) is experimentally calculated. The obtained barrier heights are also following the same trend as that of WF for three TSMs. These TSMs host unique topological nontrivial phases potentially useful for the development of emerging quantum technologies, and therefore, the findings of this study are significant for designing the future quantum devices.
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28 February 2022
Research Article|
March 01 2022
Work function of van der Waals topological semimetals: Experiment and theory
Bubunu Biswal
;
Bubunu Biswal
1
Center for 2D Material Research and Innovations and Department of Physics, IIT Madras
, Chennai 600036, India
2
Condensed Matter Theory and Computational Lab, Department of Physics, IIT Madras
, Chennai 600036, India
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Shashi B. Mishra
;
Shashi B. Mishra
2
Condensed Matter Theory and Computational Lab, Department of Physics, IIT Madras
, Chennai 600036, India
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Renu Yadav;
Renu Yadav
1
Center for 2D Material Research and Innovations and Department of Physics, IIT Madras
, Chennai 600036, India
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Saroj Poudyal;
Saroj Poudyal
1
Center for 2D Material Research and Innovations and Department of Physics, IIT Madras
, Chennai 600036, India
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Ramesh Rajarapu;
Ramesh Rajarapu
1
Center for 2D Material Research and Innovations and Department of Physics, IIT Madras
, Chennai 600036, India
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Prahalad Kanti Barman
;
Prahalad Kanti Barman
1
Center for 2D Material Research and Innovations and Department of Physics, IIT Madras
, Chennai 600036, India
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Khade Ramdas Pandurang;
Khade Ramdas Pandurang
3
Department of Electrical Engineering, IIT Madras
, Chennai 600036, India
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Manasi Mandal;
Manasi Mandal
4
Department of Physics, Indian Institute of Science Education and Research
, Bhopal 462066, India
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Ravi Prakash Singh
;
Ravi Prakash Singh
4
Department of Physics, Indian Institute of Science Education and Research
, Bhopal 462066, India
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B. R. K. Nanda
;
B. R. K. Nanda
2
Condensed Matter Theory and Computational Lab, Department of Physics, IIT Madras
, Chennai 600036, India
5
Center for Atomistic Modelling and Materials Design, IIT Madras
, Chennai 600036, India
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Abhishek Misra
Abhishek Misra
a)
1
Center for 2D Material Research and Innovations and Department of Physics, IIT Madras
, Chennai 600036, India
a)Author to whom correspondence should be addressed: abhishek.misra@iitm.ac.in
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a)Author to whom correspondence should be addressed: abhishek.misra@iitm.ac.in
Appl. Phys. Lett. 120, 093101 (2022)
Article history
Received:
November 17 2021
Accepted:
February 15 2022
Citation
Bubunu Biswal, Shashi B. Mishra, Renu Yadav, Saroj Poudyal, Ramesh Rajarapu, Prahalad Kanti Barman, Khade Ramdas Pandurang, Manasi Mandal, Ravi Prakash Singh, B. R. K. Nanda, Abhishek Misra; Work function of van der Waals topological semimetals: Experiment and theory. Appl. Phys. Lett. 28 February 2022; 120 (9): 093101. https://doi.org/10.1063/5.0079032
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