Subband-resolved momentum-conserved resonant tunneling in monolayer graphene/h-BN/ABA-trilayer graphene small-twist-angle tunneling device

We demonstrate twist-controlled resonant tunneling in a monolayer graphene (MLG)/hexagonal boron nitride (h-BN)/ABA-stacked trilayer graphene (TLG) van der Waals (vdW) junction, in which MLG and TLG flakes are aligned with a small twist angle θ of ∼1.05° between their crystallographic orientations through a thin h-BN barrier. Owing to the small interlayer twist, resonant tunneling attributed to the conservation of momentum and energy was observed between the single linear band of MLG and multiple subbands of TLG. We show that different subbands of TLG—bilayer-graphene-like subbands and a MLG-like subband—exhibit distinctly different resonant tunneling behaviors. Therefore, we demonstrate subband-resolved resonant tunneling. This technique provides a method to determine band parameters (Slonczewski–Weiss–McClure parameters) and probes the band dispersion of different two-dimensional materials by utilizing a MLG electrode.