GaN-based metal–oxide–semiconductor (MOS) devices, such as n- and p-type capacitors and inversion- and accumulation-type p-channel field effect transistors (MOSFETs), were fabricated by Mg-ion implantation and ultra-high-pressure annealing (UHPA) under 1-GPa nitrogen pressure. Even though UHPA was conducted at 1400 °C without protective layers on GaN surfaces, n-type MOS capacitors with SiO2 gate dielectrics formed on non-ion-implanted regions exhibited well-behaved capacitance–voltage characteristics with negligible hysteresis and frequency dispersion, indicating distinct impact of UHPA in suppressing surface degradation during high-temperature annealing. Efficient activation of the implanted Mg dopants and reasonable hole accumulation at the SiO2/GaN interfaces were also achieved for p-type capacitors by UHPA, but the fabricated inversion- and accumulation-type p-channel GaN MOSFETs were hardly turned on. The findings reveal extremely low hole mobility at GaN MOS interfaces and suggest an intrinsic obstacle for the development of GaN-based MOS devices.
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21 February 2022
Research Article|
February 23 2022
Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing Available to Purchase
Yuhei Wada;
Yuhei Wada
1
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
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Hidetoshi Mizobata
;
Hidetoshi Mizobata
a)
1
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
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Mikito Nozaki;
Mikito Nozaki
1
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
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Takuma Kobayashi
;
Takuma Kobayashi
1
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
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Takuji Hosoi
;
Takuji Hosoi
1
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
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Tetsu Kachi
;
Tetsu Kachi
2
Institute of Materials and Systems for Sustainability, Nagoya University
, Nagoya, Aichi 464-8601, Japan
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Takayoshi Shimura
;
Takayoshi Shimura
1
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
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Heiji Watanabe
Heiji Watanabe
a)
1
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
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Yuhei Wada
1
Hidetoshi Mizobata
1,a)
Mikito Nozaki
1
Takuma Kobayashi
1
Takuji Hosoi
1
Tetsu Kachi
2
Takayoshi Shimura
1
Heiji Watanabe
1,a)
1
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
2
Institute of Materials and Systems for Sustainability, Nagoya University
, Nagoya, Aichi 464-8601, Japan
Appl. Phys. Lett. 120, 082103 (2022)
Article history
Received:
December 07 2021
Accepted:
February 09 2022
Citation
Yuhei Wada, Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takuji Hosoi, Tetsu Kachi, Takayoshi Shimura, Heiji Watanabe; Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing. Appl. Phys. Lett. 21 February 2022; 120 (8): 082103. https://doi.org/10.1063/5.0081198
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