In this work, we revisit the density functional theory (DFT)-based results for electron–phonon scattering in highly excited silicon. Using the state-of-the-art ab initio methods, we examine the main scattering channels, which contribute to the total electron–phonon scattering rate and the energy loss rate of photoexcited electrons in silicon as well as their temperature dependence. Both temperature dependence and the main scattering channels are shown to strongly differ for the total electron–phonon scattering rate and the energy loss rate of photoexcited electrons. While the total electron–phonon scattering rate increases strongly with temperature, the temperature dependence of the energy loss rate is negligible. Also, while acoustic phonons dominate the total electron–phonon scattering rate at 300 K, the main contribution to the energy loss rate comes from optical modes. In this respect, DFT-based results are found to disagree with conclusions of Fischetti et al. [Appl. Phys. Lett. 114, 222104 (2019)]. We explain the origin of this discrepancy, which is mainly due to differences in the description of the electron–phonon scattering channels associated with transverse phonons.
Skip Nav Destination
Article navigation
21 February 2022
Research Article|
February 22 2022
Hot electron relaxation and energy loss rate in silicon: Temperature dependence and main scattering channels
R. Sen
;
R. Sen
Laboratoire des Solides Irradiés, CEA/DRF/IRAMIS, École Polytechnique, CNRS, Institut Polytechnique de Paris
, 91120 Palaiseau, France
Search for other works by this author on:
N. Vast;
N. Vast
Laboratoire des Solides Irradiés, CEA/DRF/IRAMIS, École Polytechnique, CNRS, Institut Polytechnique de Paris
, 91120 Palaiseau, France
Search for other works by this author on:
J. Sjakste
J. Sjakste
a)
Laboratoire des Solides Irradiés, CEA/DRF/IRAMIS, École Polytechnique, CNRS, Institut Polytechnique de Paris
, 91120 Palaiseau, France
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
a)Author to whom correspondence should be addressed: [email protected]
Appl. Phys. Lett. 120, 082101 (2022)
Article history
Received:
December 17 2021
Accepted:
February 08 2022
Citation
R. Sen, N. Vast, J. Sjakste; Hot electron relaxation and energy loss rate in silicon: Temperature dependence and main scattering channels. Appl. Phys. Lett. 21 February 2022; 120 (8): 082101. https://doi.org/10.1063/5.0082727
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.
Related Content
Effect of interface roughness on silicon-on-insulator–metal-semiconductor field-effect transistor mobility and the device low-power high-frequency operation
J. Vac. Sci. Technol. B (July 2005)
“Hot electrons in Si lose energy mostly to optical phonons”: Truth or myth?
Appl. Phys. Lett. (June 2019)
Thermalization of radiation-induced electrons in wide-bandgap materials: A first-principles approach
Appl. Phys. Lett. (December 2023)
Investigating the high field transport properties of Janus WSSe and MoSSe by DFT analysis and Monte Carlo simulations
J. Appl. Phys. (April 2022)
Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures
Appl. Phys. Lett. (May 2012)