We investigate the behavior of the metal-insulator transition (MIT) in TiS3 nanowire field-effect transistors, in the strongly nonequilibrium limit that has, thus far, largely been neglected. Under high electric fields within the TiS3 channel (115 kV/cm), we observe the emergence of a critical fixed point, separating insulating and metallic regions in the transfer curves of the device. The critical gate voltage that defines this fixed point evolves systematically with the drain bias (field), allowing us to map out a phase diagram that identifies the conditions for metallicity or for insulating behavior. Dependent upon the choice of the gate voltage used to tune the carrier concentration in the nanowire, the existence of the field-induced MIT allows the TiS3 to be either insulating or metallic over an extensive range of temperature. The possible connection of this strongly nonequilibrium state to some form of charge density wave is discussed.
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14 February 2022
Research Article|
February 14 2022
High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors
Special Collection:
One-Dimensional van der Waals Materials
M. D. Randle
;
M. D. Randle
a)
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260, USA
a)Author to whom correspondence should be addressed: [email protected]
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A. Lipatov
;
A. Lipatov
2
Department of Chemistry, Biology, and Health Sciences, South Dakota School of Mines and Technology
, Rapid City, South Dakota 57701, USA
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A. Datta;
A. Datta
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260, USA
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A. Kumar
;
A. Kumar
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260, USA
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I. Mansaray;
I. Mansaray
3
Department of Physics, University at Buffalo, The State University of New York
, Buffalo, New York 14260, USA
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A. Sinitskii
;
A. Sinitskii
4
Department of Chemistry, University at Nebraska-Lincoln
, Lincoln, Nebraska 68588, USA
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U. Singisetti
;
U. Singisetti
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260, USA
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J. E. Han;
J. E. Han
3
Department of Physics, University at Buffalo, The State University of New York
, Buffalo, New York 14260, USA
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J. P. Bird
J. P. Bird
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260, USA
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M. D. Randle
1,a)
A. Lipatov
2
A. Datta
1
A. Kumar
1
I. Mansaray
3
A. Sinitskii
4
U. Singisetti
1
J. E. Han
3
J. P. Bird
1
1
Department of Electrical Engineering, University at Buffalo, The State University of New York
, Buffalo, New York 14260, USA
2
Department of Chemistry, Biology, and Health Sciences, South Dakota School of Mines and Technology
, Rapid City, South Dakota 57701, USA
3
Department of Physics, University at Buffalo, The State University of New York
, Buffalo, New York 14260, USA
4
Department of Chemistry, University at Nebraska-Lincoln
, Lincoln, Nebraska 68588, USA
a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the APL Special Collection on One-Dimensional van der Waals Materials.
Appl. Phys. Lett. 120, 073102 (2022)
Article history
Received:
December 22 2021
Accepted:
January 20 2022
Citation
M. D. Randle, A. Lipatov, A. Datta, A. Kumar, I. Mansaray, A. Sinitskii, U. Singisetti, J. E. Han, J. P. Bird; High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors. Appl. Phys. Lett. 14 February 2022; 120 (7): 073102. https://doi.org/10.1063/5.0083166
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