Deep level defects in wide bandgap semiconductors, whose response times are in the range of power converter switching times, can have a significant effect on converter efficiency. We use deep level transient spectroscopy (DLTS) to evaluate such defect levels in the n-drift layer of vertical gallium nitride (v-GaN) power diodes with VBD ∼ 1500 V. DLTS reveals three energy levels that are at ∼0.6 eV (highest density), ∼0.27 eV (lowest density), and ∼45 meV (a dopant level) from the conduction band. Dopant extraction from capacitance–voltage measurement tests (C–V) at multiple temperatures enables trap density evaluation, and the ∼0.6 eV trap has a density of 1.2 × 1015 cm−3. The 0.6 eV energy level and its density are similar to a defect that is known to cause current collapse in GaN based surface conducting devices (like high electron mobility transistors). Analysis of reverse bias currents over temperature in the v-GaN diodes indicates a predominant role of the same defect in determining reverse leakage current at high temperatures, reducing switching efficiency.
Skip Nav Destination
Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy
Article navigation
31 January 2022
Research Article|
January 31 2022
Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy
Special Collection:
Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices
S. DasGupta
;
S. DasGupta
a)
Sandia National Laboratories
, Albuquerque, New Mexico 87185, USA
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
O. Slobodyan
;
O. Slobodyan
Sandia National Laboratories
, Albuquerque, New Mexico 87185, USA
Search for other works by this author on:
T. Smith;
T. Smith
Sandia National Laboratories
, Albuquerque, New Mexico 87185, USA
Search for other works by this author on:
A. Binder
;
A. Binder
Sandia National Laboratories
, Albuquerque, New Mexico 87185, USA
Search for other works by this author on:
J. Flicker;
J. Flicker
Sandia National Laboratories
, Albuquerque, New Mexico 87185, USA
Search for other works by this author on:
R. Kaplar
;
R. Kaplar
Sandia National Laboratories
, Albuquerque, New Mexico 87185, USA
Search for other works by this author on:
J. Mueller;
J. Mueller
Sandia National Laboratories
, Albuquerque, New Mexico 87185, USA
Search for other works by this author on:
L. Garcia Rodriguez
;
L. Garcia Rodriguez
Sandia National Laboratories
, Albuquerque, New Mexico 87185, USA
Search for other works by this author on:
S. Atcitty
S. Atcitty
Sandia National Laboratories
, Albuquerque, New Mexico 87185, USA
Search for other works by this author on:
a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the APL Special Collection on Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices.
Appl. Phys. Lett. 120, 053502 (2022)
Article history
Received:
December 13 2021
Accepted:
January 12 2022
Citation
S. DasGupta, O. Slobodyan, T. Smith, A. Binder, J. Flicker, R. Kaplar, J. Mueller, L. Garcia Rodriguez, S. Atcitty; Identification of the defect dominating high temperature reverse leakage current in vertical GaN power diodes through deep level transient spectroscopy. Appl. Phys. Lett. 31 January 2022; 120 (5): 053502. https://doi.org/10.1063/5.0082257
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Special issue APL organic and hybrid photodetectors
Karl Leo, Canek Fuentes-Hernandez, et al.
Related Content
Leakage and breakdown mechanisms of GaN vertical power FinFETs
Appl. Phys. Lett. (April 2019)
Leakage current analysis of silicon diode with anode activated by furnace annealing or laser annealing using deep level transient spectroscopy
AIP Advances (December 2020)
Single β-Ga2O3 nanowire based lateral FinFET on Si
Appl. Phys. Lett. (April 2022)
Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n -type ZnO
Appl. Phys. Lett. (March 2005)