Vertical GaN trench MOSFETs have shown enormous potential for efficient power switching applications. Low ON-resistance (RON) to minimize power loss, high output current (ION) to maximize driving capability, and large threshold voltage (Vth) to avoid false turn-on are highly desirable. This work reports vertical GaN trench MOSFETs with step-graded channel doping. Conventional devices with uniform channel doping were involved for comparison. The experimental results show that step-graded channel doping can achieve an improved trade-off between ION, RON, and Vth than uniform channel doping.
Vertical GaN trench MOSFETs with step-graded channel doping
Note: This paper is part of the APL Special Collection on Wide- and Ultrawide-Bandgap Electronic Semiconductor Devices.
Renqiang Zhu, Huaxing Jiang, Chak Wah Tang, Kei May Lau; Vertical GaN trench MOSFETs with step-graded channel doping. Appl. Phys. Lett. 13 June 2022; 120 (24): 242104. https://doi.org/10.1063/5.0088251
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