Printable ion-gel-gated In₂O₃ synaptic transistor array for neuro-inspired memory

With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In₂O₃ synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al₂O₃ stacked gate dielectric, all devices on the array achieved a large hysteresis window of >1 V, a steep back sweep subthreshold swing of <60 mV/decade, and a nonvolatile memory behavior, showing that the screen-printed ion-gel has satisfactory uniformity in large scale. In addition, short-term to long-term plasticity, paired-pulse facilitation, and spike-rate-dependent plasticity are simulated. Based on the plasticity regulated with the spike frequency, a high-pass filter was realized. Flash memory as a special memory model in the nervous system has been simulated in the array. This study provides a unique platform for designing high-performance, repeatable, and stable artificial synapses for the neuromorphic system.