The interface properties of strongly correlated electron system/band semiconductor junctions were investigated in the La1−xSrxVO3/p-Si(100) structure. Spectroscopic observations show that the electronic structure of the interface is typical of insulator/semiconductor junctions for x ≤ 0.2 and Schottky junctions for x ≥ 0.25. For the forward current density–bias voltage (J–V) characteristics, energy barriers that were otherwise unexplainable by spectroscopy were estimated from the thermionic emission model fitting of the J–V characteristics, indicating that the injected carriers from Si to La1−xSrxVO3 can also feel the correlation force of Coulomb repulsion at the interface.
Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions
Present address: Institute of High Energy Physics, Chinese Academy of Sciences, Yuquan Road 19B, Shijingshan District, Beijing 100049, China.
Yasushi Hotta, Ryoichi Nemoto, Keisuke Muranushi, Yujun Zhang, Hiroki Wadati, Keita Muraoka, Hiroshi Sakanaga, Haruhiko Yoshida, Koji Arafune, Hitoshi Tabata; Carrier injection behaviors from a band semiconductor to strongly correlated electron system in perovskite lanthanum vanadate/silicon junctions. Appl. Phys. Lett. 6 June 2022; 120 (23): 232106. https://doi.org/10.1063/5.0094708
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