An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance () derived from the space charge limited current–voltage relationship (Mott–Gurney square law). The limitations of the traditional Ohmic for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott–Gurney based is confirmed by Silvaco ATLAS drift–diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.
References
1.
R.
Raghunathan
and B. J.
Baliga
, “Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
,” Solid-State Electron.
43
(2
), 199
–211
(1999
).2.
A.
Lidow
, M.
de Rooij
, J.
Strydom
, D.
Reusch
, and J.
Glaser
, GaN Transistors for Efficient Power Conversion
(Wiley
, 2019
).3.
J.
Yang
, S.
Ahn
, F.
Ren
, S. J.
Pearton
, S.
Jang
, J.
Kim
, and A.
Kuramata
, “High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
,” Appl. Phys. Lett.
110
(19
), 192101
(2017
).4.
H.
Fu
, I.
Baranowski
, X.
Huang
, H.
Chen
, Z.
Lu
, J.
Montes
, X.
Zhang
, and Y.
Zhao
, “Demonstration of AlN Schottky barrier diodes with blocking voltage over 1 kV
,” IEEE Electron Device Lett.
38
(9
), 1286
–1289
(2017
).5.
N.
Donato
, D.
Pagnano
, E.
Napoli
, G.
Longobardi
, and F.
Udrea
, “Design of a normally-off diamond JFET for high power integrated applications
,” Diamond Relat. Mater.
78
, 73
–82
(2017
).6.
K.
Tsunenobu
and J. A.
Cooper
, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
(John Wiley & Sons
, 2014
).7.
K.
Shenai
, R. S.
Scott
, and B. J.
Baliga
, “Optimum semiconductors for high-power electronics
,” IEEE Trans. Electron Devices
36
(9
), 1811
–1823
(1989
).8.
X. M.
Shen
, D. G.
Zhao
, Z. S.
Liu
, Z. F.
Hu
, H.
Yang
, and J. W.
Liang
, “Space-charge-limited currents in GaN Schottky diodes
,” Solid-State Electron.
49
(5
), 847
–852
(2005
).9.
A.
Lozovoi
, H.
Jayakumar
, D.
Daw
, A.
Lakra
, and C. A.
Meriles
, “Probing metastable space-charge potentials in a wide band gap semiconductor
,” Phys. Rev. Lett.
125
(25
), 256602
(2020
).10.
Y.
Matsumae
, Y.
Akiba
, Y.
Hirose
, T.
Kurosu
, and M.
Iida
, “Space charge limited current in semiconducting diamond films
,” Jpn. J. Appl. Phys., Part 2
33
(5B
), L702
–L704
(1994
).11.
J.
Zhang
and W. R.
Harrell
, “Analysis of the I–V characteristics of Al/4H-SiC Schottky diodes
,” J. Vac. Sci. Technol. B
21
(2
), 872
(2003
).12.
H.
Surdi
, F. A.
Koeck
, M. F.
Ahmad
, T. J.
Thornton
, R. J.
Nemanich
, and S. M.
Goodnick
, “Demonstration and analysis of ultrahigh forward current density diamond diodes
,” IEEE Trans. Electron Devices
69
(1
), 254
–261
(2022
).13.
B. J.
Baliga
, Fundamentals of Power Semiconductor Devices
(Springer
, 2008
).14.
T.
Makino
, H.
Kato
, N.
Tokuda
, M.
Ogura
, D.
Takeuchi
, K.
Oyama
, S.
Tanimoto
, H.
Okushi
, and S.
Yamasaki
, “Diamond Schottky‐pn diode without trade‐off relationship between on‐resistance and blocking voltage
,” Phys. Status Solidi A
207
(9
), 2105
–2109
(2010
).15.
K. C.
Kao
, W.
Hwang
, and S.-I.
Choi
, “Electrical transport in solid
,” Phys. Today
36
(10
), 90
(1983
).16.
N. F.
Mott
and R. W. Gurney, Electronic Processes in Ionic Crystals
(Clarendon Press
, 1948
).17.
J. A.
Cooper
and D. T.
Morisette
, “Performance limits of vertical unipolar power devices in GaN and 4H-SiC
,” IEEE Electron Device Lett.
41
(6
), 892
–895
(2020
).18.
I.
Stenger
, M.-A.
Pinault-Thaury
, T.
Kociniewski
, A.
Lusson
, E.
Chikoidze
, F.
Jomard
, Y.
Dumont
, J.
Chevallier
, and J.
Barjon
, “Impurity-to-band activation energy in phosphorus doped diamond
,” J. Appl. Phys.
114
(7
), 073711
(2013
).19.
J.-P.
Lagrange
, A.
Deneuville
, and E.
Gheeraert
, “Activation energy in low compensated homoepitaxial boron-doped diamond films
,” Diamond Relat. Mater.
7
(9
), 1390
–1393
(1998
).20.
S. M.
Sze
, L.
Yiming
, and K. K.
Ng
, Physics of Semiconductor Devices
, 3rd ed. (John Wiley & Sons
, 2021
), p. 25
.21.
R.
Hathwar
, M.
Dutta
, F. A.
Koeck
, R. J.
Nemanich
, S.
Chowdhury
, and S. M.
Goodnick
, “Temperature dependent simulation of diamond depleted Schottky PIN diodes
,” J. Appl. Phys.
119
(22
), 225703
(2016
).22.
Y.
Zhang
and J. S.
Speck
, “Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices
,” Semicond. Sci. Technol.
35
(12
), 125018
(2020
).23.
G.
Chicot
, D.
Eon
, and N.
Rouger
, “Optimal drift region for diamond power devices
,” Diamond Relat. Mater.
69
, 68
–73
(2016
).24.
E.
Gheeraert
, “3.1 Power electronic devices performances based on diamond properties
,” in Power Electronics Device Applications of Diamond Semiconductors
(Woodhead Publishing
, 2018
), pp. 191
–200
.25.
H.
Umezawa
, M.
Nagase
, Y.
Kato
, and S.-I.
Shikata
, “High temperature application of diamond power devices
,” Diamond Relat. Mater.
24
, 201
–205
(2012
).26.
N.
Donato
, N.
Rouger
, J.
Pernot
, G.
Longobardi
, and F.
Udrea
, “Diamond power devices: State of the art, modelling, figures of merit and future perspective
,” J. Phys. D
53
(9
), 093001
(2020
).© 2022 Author(s). Published under an exclusive license by AIP Publishing.
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