Perpendicular magnetization switching driven by spin–orbit torques plays an increasingly important role for spintronic devices toward practical applications but is also hindered by the well-known technical challenge that an external in-plane magnetic field is required for deterministic switching. Here, we show that the deterministic switching can be achieved in synthetic antiferromagnets through the flexible domain control in the absence of external magnetic fields. Specifically, we have observed that the domain wall (DW) distorts under an applied electric current in contrast to the conventional rigid DW motion in a single ferromagnet. More importantly, the distorted DWs can be precisely controlled under zero magnetic field, leading to the deterministic switching. Our results indicate that the critical technical challenge may be addressed by employing a synthetic antiferromagnetic layer through the DW motion dominated field-free switching.
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30 May 2022
Research Article|
May 31 2022
Controlling domain wall and field-free spin–orbit torque switching in synthetic antiferromagnets
Yuelei Zhao
;
Yuelei Zhao
1
School of Science and Engineering, The Chinese University of Hong Kong
, Shenzhen, Guangdong 518172, China
2
University of Science and Technology of China
, Hefei, Anhui 230026, China
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Sheng Yang;
Sheng Yang
1
School of Science and Engineering, The Chinese University of Hong Kong
, Shenzhen, Guangdong 518172, China
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Kai Wu
;
Kai Wu
1
School of Science and Engineering, The Chinese University of Hong Kong
, Shenzhen, Guangdong 518172, China
2
University of Science and Technology of China
, Hefei, Anhui 230026, China
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Xiaoguang Li;
Xiaoguang Li
3
Center for Advanced Material Diagnostic Technology, College of Engineering Physics, Shenzhen Technology University
, Shenzhen 518118, China
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Xichao Zhang;
Xichao Zhang
4
Department of Electrical and Computer Engineering, Shinshu University
, 4-17-1 Wakasato, Nagano 380-8553, Japan
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Li Li;
Li Li
1
School of Science and Engineering, The Chinese University of Hong Kong
, Shenzhen, Guangdong 518172, China
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Zhiqin Chu
;
Zhiqin Chu
5
Department of Electrical and Electronic Engineering, Joint Appointment with School of Biomedical Sciences, The University of Hong Kong
, Pokfulam Road, Hong Kong, China
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Chong Bi;
Chong Bi
6
The Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics Chinese Academy of Sciences
, Beijing 100029, China
7
University of Chinese Academy of Sciences
, Beijing 100049, China
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Yan Zhou
Yan Zhou
a)
1
School of Science and Engineering, The Chinese University of Hong Kong
, Shenzhen, Guangdong 518172, China
a)Author to whom correspondence should be addressed: zhouyan@cuhk.edu.cn
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a)Author to whom correspondence should be addressed: zhouyan@cuhk.edu.cn
Appl. Phys. Lett. 120, 222401 (2022)
Article history
Received:
March 24 2022
Accepted:
May 13 2022
Citation
Yuelei Zhao, Sheng Yang, Kai Wu, Xiaoguang Li, Xichao Zhang, Li Li, Zhiqin Chu, Chong Bi, Yan Zhou; Controlling domain wall and field-free spin–orbit torque switching in synthetic antiferromagnets. Appl. Phys. Lett. 30 May 2022; 120 (22): 222401. https://doi.org/10.1063/5.0092945
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